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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

IEEE electron device letters, 2014-08, Vol.35 (8), p.826-828

2014

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Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

IEEE electron device letters, 2013-09, Vol.34 (9), p.1115-1117

2013

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Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices

IEEE transactions on semiconductor manufacturing, 2016-11, Vol.29 (4), p.343-348

2016

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Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Applied physics letters, 2015-08, Vol.107 (8)

2015

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Characterization of an Mg-implanted GaN p-i-n diode

Physica status solidi. A, Applications and materials science, 2015-12, Vol.212 (12), p.2772-2775

2015

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Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices

Applied physics express, 2013-06, Vol.6 (6), p.61003

2013

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Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

Journal of electronic materials, 2021-06, Vol.50 (6), p.3013-3021

2021

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Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs

IEEE electron device letters, 2016-05, Vol.37 (5), p.545-548

2016

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On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers

Electrochimica acta, 2019-11, Vol.323, p.134778, Article 134778

2019

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Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

Applied physics express, 2017-12, Vol.10 (12), p.126501

2017

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Vertical GaN Junction Barrier Schottky Diodes

ECS journal of solid state science and technology, 2017-01, Vol.6 (1), p.Q10-Q12

2017

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Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN

ECS journal of solid state science and technology, 2015-01, Vol.4 (9), p.P382-P386

2015

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Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

IEEE transactions on semiconductor manufacturing, 2019-11, Vol.32 (4), p.478-482

2019

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Characterization of a selective AlN wet etchant

Applied physics express, 2015-03, Vol.8 (3), p.36501

2015

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Nanocrystalline Diamond-Gated AlGaN/GaN HEMT

IEEE electron device letters, 2013-11, Vol.34 (11), p.1382-1384

2013

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MnO2-Based Electrochemical Supercapacitors on Flexible Carbon Substrates

Journal of electronic materials, 2014-04, Vol.43 (4), p.1188-1193

2014

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Processing of Cavities in SiC Material for Quantum Technologies

Materials science forum, 2018-06, Vol.924, p.905-908

2018

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Initiating polarity inversion in GaN growth using an AlN interlayer

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1504-1506

2011

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Comparison of AlN encapsulants for high-temperature GaN annealing

Applied physics express, 2014-12, Vol.7 (12), p.121003

2014

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(Invited) Vertical GaN p-i-n Diodes Formed by Mg Ion Implantation

ECS transactions, 2015-09, Vol.69 (11), p.99-103

2015

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Comparison of AlN Encapsulants for Bulk GaN Multicycle Rapid Thermal Annealing

ECS journal of solid state science and technology, 2015-01, Vol.4 (12), p.P403-P407

2015

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Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing

Electronic Materials Letters, 2016, 12(1), , pp.133-138

2016

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III-nitride nanowire based light emitting diodes on carbon paper

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.442-445

2014

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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices

Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Characterization of an Mg-implanted GaN p-i-n diode

Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices

Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs

On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers

Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

Vertical GaN Junction Barrier Schottky Diodes

Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN

Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

Characterization of a selective AlN wet etchant

Nanocrystalline Diamond-Gated AlGaN/GaN HEMT

MnO2-Based Electrochemical Supercapacitors on Flexible Carbon Substrates

Processing of Cavities in SiC Material for Quantum Technologies

Initiating polarity inversion in GaN growth using an AlN interlayer

Comparison of AlN encapsulants for high-temperature GaN annealing

(Invited) Vertical GaN p-i-n Diodes Formed by Mg Ion Implantation

Comparison of AlN Encapsulants for Bulk GaN Multicycle Rapid Thermal Annealing

Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing

III-nitride nanowire based light emitting diodes on carbon paper

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