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2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3811-3817

2024

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GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art fT × LG Value

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.968-972

2022

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IEEE_Xplore

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Nature (London), 2018-03, Vol.555 (7695), p.183-189

2018

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Numerical investigations into the impact of substrate defects on a grooved GaN-based ultraviolet phototransistor with an AlGaN polarization gate

Applied optics (2004), 2024-07, Vol.63 (19), p.5184

2024

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Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Applied physics letters, 2015-03, Vol.106 (13)

2015

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AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.91-94

2016

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IEEE_Xplore

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Advantages and limitations of UV optoelectronics on AlN substrates

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.135-136

2015

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IEEE_Xplore

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Applied physics letters, 2023-02, Vol.122 (9)

2023

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Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN

Applied physics letters, 2023-12, Vol.123 (25)

2023

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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

Journal of applied physics, 2024-03, Vol.135 (9)

2024

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A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Quasi-pseudomorphic AlGaN based deep ultraviolet LEDs over sapphire substrates

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.5-6

2015

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IEEE_Xplore

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Applied physics letters, 2022-04, Vol.120 (17)

2022

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KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Applied physics letters, 2015-02, Vol.106 (8)

2015

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Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles

Applied physics letters, 2021-08, Vol.119 (7)

2021

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Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

Applied physics letters, 2022-06, Vol.120 (26)

2022

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MP8 (contributed) 5:30 PM-5:30 PM

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.108-108

2015

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Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

Applied physics letters, 2020-08, Vol.117 (6)

2020

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High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied physics letters, 2020-02, Vol.116 (8)

2020

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Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates

Applied physics letters, 2017-05, Vol.110 (19)

2017

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High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Applied physics letters, 2022-08, Vol.121 (8)

2022

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Milliwatt-power sub-230-nm AlGaN LEDs with >1500 h lifetime on a single-crystal AlN substrate with many quantum wells for effective carrier injection

Applied physics letters, 2023-03, Vol.122 (10)

2023

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2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current

GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art fT × LG Value

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Numerical investigations into the impact of substrate defects on a grooved GaN-based ultraviolet phototransistor with an AlGaN polarization gate

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Advantages and limitations of UV optoelectronics on AlN substrates

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

A GaN–SiC hybrid material for high-frequency and power electronics

Quasi-pseudomorphic AlGaN based deep ultraviolet LEDs over sapphire substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

High performance and high yield sub-240 nm AlN:GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates

Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

MP8 (contributed) 5:30 PM-5:30 PM

Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Milliwatt-power sub-230-nm AlGaN LEDs with >1500 h lifetime on a single-crystal AlN substrate with many quantum wells for effective carrier injection

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