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A Fast CA 19-9 Screening for Pancreatic Cancer Clinical Trials Utilizing AlGaN/GaN High Electron Mobility Transistors

IEEE sensors journal, 2024-10, Vol.24 (20), p.31754-31762

2024

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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Journal of the Korean Physical Society, 2019, 74(4), , pp.349-357

2019

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Improved frequency response of the 3.5 GHz SMR devices using Ga-doped AlN thin films as the piezoelectric layers

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2022-08, Vol.36 (23)

2022

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AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Japanese Journal of Applied Physics, 2023-08, Vol.62 (SK), p.SK1013

2023

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines (Basel), 2024-01, Vol.15 (1), p.81

2024

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The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Nature photonics, 2019-04, Vol.13 (4), p.233-244

2019

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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100209-1-100209-10

2014

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Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors

Applied physics letters, 2022-02, Vol.120 (9)

2022

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The road ahead for ultrawide bandgap solar-blind UV photodetectors

Journal of applied physics, 2022-04, Vol.131 (15)

2022

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Low temperature memory effects in AlGaN/GaN nanochannels

Applied physics letters, 2023-09, Vol.123 (10)

2023

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A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

Nature photonics, 2016-09, Vol.10 (9), p.595-599

2016

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Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Applied physics letters, 2015-03, Vol.106 (13)

2015

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Effect of gamma irradiation on GaN lateral Schottky barrier diodes

Journal of physics. Conference series, 2022-11, Vol.2370 (1), p.12014

2022

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N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Applied physics letters, 2023-02, Vol.122 (9)

2023

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High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Applied physics letters, 2015-04, Vol.106 (14)

2015

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AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

Applied physics letters, 2018-01, Vol.112 (4)

2018

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Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering

Applied physics letters, 2024-07, Vol.125 (2)

2024

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Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Applied physics letters, 2015-10, Vol.107 (16)

2015

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Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Applied physics letters, 2023-02, Vol.122 (9)

2023

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234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

Applied physics letters, 2018-01, Vol.112 (1)

2018

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On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Applied physics letters, 2017-03, Vol.110 (12)

2017

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A Fast CA 19-9 Screening for Pancreatic Cancer Clinical Trials Utilizing AlGaN/GaN High Electron Mobility Transistors

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Improved frequency response of the 3.5 GHz SMR devices using Ga-doped AlN thin films as the piezoelectric layers

AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

GaN-based power devices: Physics, reliability, and perspectives

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors

The road ahead for ultrawide bandgap solar-blind UV photodetectors

Low temperature memory effects in AlGaN/GaN nanochannels

A GaN–SiC hybrid material for high-frequency and power electronics

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Effect of gamma irradiation on GaN lateral Schottky barrier diodes

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

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