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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806

2018

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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

2015 73rd Annual Device Research Conference (DRC), 2015, p.31-32

2015

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IEEE_Xplore

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Nature (London), 2018-03, Vol.555 (7695), p.183-189

2018

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A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

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High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Applied physics letters, 2020-08, Vol.117 (7)

2020

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Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Applied physics letters, 2023-02, Vol.122 (9)

2023

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Topological effects of phonons in GaN and AlGaN: A potential perspective for tuning phonon transport

Journal of applied physics, 2021-02, Vol.129 (8)

2021

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Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Applied physics letters, 2024-06, Vol.124 (24)

2024

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High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Applied physics letters, 2024-05, Vol.124 (20)

2024

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Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Applied physics letters, 2018-08, Vol.113 (7)

2018

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Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Applied physics letters, 2021-09, Vol.119 (12)

2021

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Thermal stability study of gallium nitride based magnetic field sensor

Journal of applied physics, 2023-10, Vol.134 (14)

2023

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Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

Applied physics letters, 2021-03, Vol.118 (9)

2021

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Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Journal of applied physics, 2023-10, Vol.134 (16)

2023

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AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Applied physics letters, 2012-08, Vol.101 (8), p.82110

2012

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Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Applied physics letters, 2018-12, Vol.113 (24)

2018

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New oxide structures clearing up the origin of two-dimensional electron gas in AlGaN/GaN heterostructures

The Journal of chemical physics, 2023-11, Vol.159 (19)

2023

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Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Applied physics letters, 2023-12, Vol.123 (26)

2023

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Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Applied physics letters, 2017-08, Vol.111 (9)

2017

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High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Applied physics letters, 2022-08, Vol.121 (8)

2022

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Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

Journal of applied physics, 2016-09, Vol.120 (10)

2016

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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

GaN-based power devices: Physics, reliability, and perspectives

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

GaN/NbN epitaxial semiconductor/superconductor heterostructures

A GaN–SiC hybrid material for high-frequency and power electronics

High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Topological effects of phonons in GaN and AlGaN: A potential perspective for tuning phonon transport

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Thermal stability study of gallium nitride based magnetic field sensor

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

New oxide structures clearing up the origin of two-dimensional electron gas in AlGaN/GaN heterostructures

Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

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