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Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

ACS applied materials & interfaces, 2019-01, Vol.11 (3), p.3142-3149

2019

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Neural coding using telegraphic switching of magnetic tunnel junction

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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A Single Magnetic Tunnel Junction Representing the Basic Logic Functions-NAND, NOR, and IMP

IEEE electron device letters, 2015-04, Vol.36 (4), p.402-404

2015

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Construction of a Bit Stream Using Telegraphic Switching of a Two-Input Magnetic Tunnel Junction

IEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4

2017

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An Associative Memory Device Using a Magnetic Tunnel Junction

IEEE transactions on magnetics, 2015-11, Vol.51 (11), p.1-4

2015

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Perpendicular Magnetic Anisotropy for CoFeBZr/MgO

IEEE transactions on magnetics, 2015-11, Vol.51 (11), p.1-4

2015

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The universal magnetic tunnel junction logic gates representing 16 binary Boolean logic operations

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

Nature (London), 2022-04, Vol.604 (7904), p.65-71

2022

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A tactile sensor using single layer graphene for surface texture recognition

Nanoscale, 2017-08, Vol.9 (29), p.10248-10255

2017

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Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO 2

ACS applied materials & interfaces, 2019-01, Vol.11 (3), p.3142-3149

2019

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Stable Subloop Behavior in Ferroelectric Si-Doped HfO2

ACS applied materials & interfaces, 2019-10, Vol.11 (42), p.38929-38936

2019

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A tactile sensor using single layer graphene for surface texture recognitionElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr03748a

2017-07

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Electric Characteristics of the Carbon Nanotube Network Transistor with Directly Grown ZnO Nanoparticles

Journal of nanoscience and nanotechnology, 2016-03, Vol.16 (3), p.2887-2890

2016

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Stable Subloop Behavior in Ferroelectric Si-Doped HfO 2

ACS applied materials & interfaces, 2019-10, Vol.11 (42), p.38929-38936

2019

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Interfacial Magnetic Anisotropy of Co90Zr10 on Pt Layer

Journal of nanoscience and nanotechnology, 2014-11, Vol.14 (11), p.8270-8274

2014

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Ultrathin ferroic HfO 2 -ZrO 2 superlattice gate stack for advanced transistors

Nature (London), 2022-04, Vol.604 (7904), p.65

2022

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Current-driven switching property of MgO-based magnetic tunnel junctions with a CoFeB free layer with in-plane magnetization

Journal of the Korean Physical Society, 2012, 61(10), , pp.1596-1599

2012

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Perpendicular magnetization of CoZr/Pt multilayers

Journal of the Korean Physical Society, 2012, 60(10), , pp.1690-1694

2012

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Modeling and Demonstration for Multi-level Weight Conductance in Computational FeFET Memory Cell

2024 IEEE International Memory Workshop (IMW), 2024, p.1-4

2024

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Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays

2024 IEEE International Memory Workshop (IMW), 2024, p.1-4

2024

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Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges

2022 IEEE International Memory Workshop (IMW), 2022, p.1-4

2022

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Demonstration of Ultra-thin Ferroelectric/dielectric and Anti-ferroelectric/dielectric Bilayers for Future DRAM Cell Capacitors

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2023, p.1-3

2023

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Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory

2022 IEEE International Memory Workshop (IMW), 2022, p.1-3

2022

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Ultrastrong and ductile steel welds achieved by fine interlocking microstructures with film-like retained austenite

Nature communications, 2024-02, Vol.15 (1), p.1301-1301, Article 1301

2024

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Hard X-ray free-electron laser with femtosecond-scale timing jitter

Nature photonics, 2017-11, Vol.11 (11), p.708-713

2017

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Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

Neural coding using telegraphic switching of magnetic tunnel junction

A Single Magnetic Tunnel Junction Representing the Basic Logic Functions-NAND, NOR, and IMP

Construction of a Bit Stream Using Telegraphic Switching of a Two-Input Magnetic Tunnel Junction

An Associative Memory Device Using a Magnetic Tunnel Junction

Perpendicular Magnetic Anisotropy for CoFeBZr/MgO

The universal magnetic tunnel junction logic gates representing 16 binary Boolean logic operations

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

A tactile sensor using single layer graphene for surface texture recognition

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO 2

Stable Subloop Behavior in Ferroelectric Si-Doped HfO2

A tactile sensor using single layer graphene for surface texture recognitionElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr03748a

Electric Characteristics of the Carbon Nanotube Network Transistor with Directly Grown ZnO Nanoparticles

Stable Subloop Behavior in Ferroelectric Si-Doped HfO 2

Interfacial Magnetic Anisotropy of Co90Zr10 on Pt Layer

Ultrathin ferroic HfO 2 -ZrO 2 superlattice gate stack for advanced transistors

Current-driven switching property of MgO-based magnetic tunnel junctions with a CoFeB free layer with in-plane magnetization

Perpendicular magnetization of CoZr/Pt multilayers

Modeling and Demonstration for Multi-level Weight Conductance in Computational FeFET Memory Cell

Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays

Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges

Demonstration of Ultra-thin Ferroelectric/dielectric and Anti-ferroelectric/dielectric Bilayers for Future DRAM Cell Capacitors

Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory

Ultrastrong and ductile steel welds achieved by fine interlocking microstructures with film-like retained austenite

Hard X-ray free-electron laser with femtosecond-scale timing jitter

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