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Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit
IEEE transactions on power electronics, 2024-02, Vol.39 (2), p.2351-2359
2024
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Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High VDS
IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3462-3467
2023
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TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch
IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5584-5589
2023
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Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT
IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3630-3635
2022
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600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects
IEEE electron device letters, 2023-02, Vol.44 (2), p.225-228
2023
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An Actively-Passivated p-GaN Gate HEMT with Screening Effect against Surface Traps
IEEE electron device letters, 2023-01, Vol.44 (1), p.1-1
2023
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Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.111-114
2023
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High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.378-381
2023
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650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk
2023 International Electron Devices Meeting (IEDM), 2023, p.1-4
2023
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