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Flexible High- \kappa/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3305-3309

2013

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IEEE_Xplore

Metal-Oxide RRAM

Proceedings of the IEEE, 2012-06, Vol.100 (6), p.1951-1970

2012

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IEEE_Xplore

Carrier Transport and Gain Mechanisms in \beta -Ga2O3-Based Metal-Semiconductor-Metal Solar-Blind Schottky Photodetectors

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2276-2281

2019

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IEEE_Xplore

Two-Transistor Metal-Ferroelectric-Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory-Part II: Experiment

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6268-6272

2023

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IEEE_Xplore

Electrically Tunable Metal-Semiconductor-Metal Terahertz Metasurface Modulators

IEEE journal of selected topics in quantum electronics, 2019-05, Vol.25 (3), p.1-8

2019

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IEEE_Xplore

Two-Transistor Metal-Ferroelectric-Metal Field- Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory-Part I: Compact Modeling

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6262-6267

2023

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IEEE_Xplore

Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High- \kappa /Metal-Gate Work-Function Variation

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4780-4785

2018

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IEEE_Xplore

Tunable single-mode bandpass filter based on metal–insulator–metal plasmonic coupled U-shaped cavities

IET optoelectronics, 2019-08, Vol.13 (4), p.161-171

2019

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Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal- Semiconductor-Metal Photodetectors, Based on Epitaxial GaN/Si(111)

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.1-7

2023

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Electronic Skins Based on Liquid Metals

Proceedings of the IEEE, 2019-10, Vol.107 (10), p.2168-2184

2019

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High-Sensitivity Plasmonic Sensor Based on Metal-Insulator-Metal Waveguide and Hexagonal-Ring Cavity

IEEE sensors journal, 2016-05, Vol.16 (9), p.3041-3046

2016

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An Empirical Investigation on the Effect of Oxygen Vacancy in ZrO2 Thin Film on the Frequency-Dependent Capacitance Degradation in the Metal-Insulator-Metal Capacitor

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5753-5757

2021

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IEEE_Xplore

Nanostructured Metal–Insulator–Metal Metamaterials for Refractive Index Biosensing Applications: Design, Fabrication, and Characterization

IEEE journal of selected topics in quantum electronics, 2017-03, Vol.23 (2), p.388-393

2017

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IEEE_Xplore

On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1172-1182

2012

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IEEE_Xplore

Ultrafast UV AlGaN Metal-Semiconductor-Metal Photodetector with a Response Time Below 25 ps

IEEE journal of quantum electronics, 2020-06, Vol.56 (3), p.1-1

2020

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IEEE_Xplore

TiO2-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors Deposited by Ultrasonic Spray Pyrolysis Technique

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.79-85

2016

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IEEE_Xplore

Stacked Triple Ultraviolet-Band Metal-Semiconductor-Metal Photodetectors

IEEE photonics technology letters, 2019-01, Vol.31 (1), p.15-18

2019

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IEEE_Xplore

Metal–insulator–metal waveguide-coupled asymmetric resonators for sensing and slow light applications

IET optoelectronics, 2018-10, Vol.12 (5), p.220-227

2018

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Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis

IET circuits, devices & systems, 2021-11, Vol.15 (8), p.745-754

2021

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Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal-Ferroelectric-Metal Capacitors

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4744-4749

2022

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IEEE_Xplore

Resistive-Gate Field-Effect Transistor: A Novel Steep-Slope Device Based on a Metal-Insulator-Metal-Oxide Gate Stack

IEEE electron device letters, 2014-08, Vol.35 (8), p.877-879

2014

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IEEE_Xplore

High Detectivity of Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4362-4365

2022

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IEEE_Xplore

Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure

IEEE electron device letters, 2021-12, Vol.42 (12), p.1786-1789

2021

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Enhanced Charge Extraction in Metal-Perovskite-Metal Back-Contact Solar Cell Structure Through Electrostatic Doping: A Numerical Study

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1757-1763

2021

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IEEE_Xplore

600 V/ 1.7~\Omega Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor

IEEE electron device letters, 2016-11, Vol.37 (11), p.1466-1469

2016

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