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A 0.0043-mm2 Capacitorless External-Clock-Free Fully-Synthesizable Digital LDO Using Load-Direct Droop Detector and Time-Based Load-State Decision

2022 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2022, p.10-12

2022

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A 0.13 /spl mu/m DRAM technology for giga bit density stand-alone and embedded DRAMs

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), 2000, p.10-11

2000

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A 0.15 /spl mu/m NAND flash technology with 0.11 /spl mu/m/sup 2/ cell size for 1 Gbit flash memory

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.767-770

2000

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0.1μm ULSI世代の超微細アルミニウム多層配線を実現するAl-CMP技術

まてりあ, 1997/06/20, Vol.36(6), pp.593-597

1997

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0.35μm CMOS Technology with Chemical Mechanical Polishing for Three Metallization Levels Planarization

ESSDERC '94: 24th European Solid State Device Research Conference, 1994, p.121-124

1994

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0.5 ¼m Pitch Wafer-to-wafer Hybrid Bonding with SiCN Bonding Interface for Advanced Memory

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, p.1110-1114

2023

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0.5-micron Inspection

Printed circuit fabrication, 2002-01, p.50

2002

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A 0.5 V 10-bit SAR ADC with offset calibrated time-domain comparator

International journal of electronics and communications, 2024-05, Vol.178, p.155261, Article 155261

2024

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0.5 μm Pitch Next Generation Hybrid Bonding with High Alignment Accuracy for 3D Integration

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, p.1100-1104

2023

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0.5 μm Pitch Wafer-to-wafer Hybrid Bonding at Low Temperatures with SiCN Bond Layer

2024 IEEE 74th Electronic Components and Technology Conference (ECTC), 2024, p.331-336

2024

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0.6 V, 116 nW Neural Spike Acquisition IC with Self-Biased Instrumentation Amplifier and Analog Spike Extraction

Sensors (Basel, Switzerland), 2018-07, Vol.18 (8), p.2460

2018

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A 0.6 V Fast-Transient-Response 180 nm CMOS Digital LDO with Coarse-Fine Tuning and Analog Enhancement

Circuits, systems, and signal processing, 2022-11, Vol.41 (11), p.6513-6529

2022

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0-600 in just nine months

Glass Age & Window Construction, 2004-05, p.34

2004

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0 rare Cedric Price

Building design, 1981-10 (568), p.2

1981

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0&Y fail to pay Tube cash

Building design, 1992-04 (1074), p.2

1992

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01-855 7777 DATE LINE

Building Design (Archive : 1969-2014), 1974-03 (193), p.2

1974

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01-855 7777 DATELINE

Building Design (Archive : 1969-2014), 1975-01 (232), p.2

1975

Volltextzugriff (PDF)

01-855 7777 DATELINE

Building Design (Archive : 1969-2014), 1974-05 (201), p.2

1974

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01-855 7777 DATELINE

Building Design (Archive : 1969-2014), 1972-10 (124), p.2

1972

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01-855 7777 DATELINE

Building Design (Archive : 1969-2014), 1973-02 (136), p.2

1973

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01-855 7777 DATELINE

Building Design (Archive : 1969-2014), 1973-01 (135), p.2

1973

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01-8557777 DATELINE

Building Design (Archive : 1969-2014), 1973-10 (173), p.2

1973

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01 Communique Named A Top Technology Innovator By VARBusiness Magazine

PR Newswire, 2006

2006

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01 Communique Named A Top Technology Innovator By VARBusiness Magazine

PR newswire, 2006-10-25

2006

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02 takes music to heart

Music week (1983), 2003-10, p.12

2003

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A 0.0043-mm2 Capacitorless External-Clock-Free Fully-Synthesizable Digital LDO Using Load-Direct Droop Detector and Time-Based Load-State Decision

A 0.13 /spl mu/m DRAM technology for giga bit density stand-alone and embedded DRAMs

A 0.15 /spl mu/m NAND flash technology with 0.11 /spl mu/m/sup 2/ cell size for 1 Gbit flash memory

0.1μm ULSI世代の超微細アルミニウム多層配線を実現するAl-CMP技術

0.35μm CMOS Technology with Chemical Mechanical Polishing for Three Metallization Levels Planarization

0.5 ¼m Pitch Wafer-to-wafer Hybrid Bonding with SiCN Bonding Interface for Advanced Memory

0.5-micron Inspection

A 0.5 V 10-bit SAR ADC with offset calibrated time-domain comparator

0.5 μm Pitch Next Generation Hybrid Bonding with High Alignment Accuracy for 3D Integration

0.5 μm Pitch Wafer-to-wafer Hybrid Bonding at Low Temperatures with SiCN Bond Layer

0.6 V, 116 nW Neural Spike Acquisition IC with Self-Biased Instrumentation Amplifier and Analog Spike Extraction

A 0.6 V Fast-Transient-Response 180 nm CMOS Digital LDO with Coarse-Fine Tuning and Analog Enhancement

0-600 in just nine months

0 rare Cedric Price

0&Y fail to pay Tube cash

01-855 7777 DATE LINE

01-855 7777 DATELINE

01-855 7777 DATELINE

01-855 7777 DATELINE

01-855 7777 DATELINE

01-855 7777 DATELINE

01-8557777 DATELINE

01 Communique Named A Top Technology Innovator By VARBusiness Magazine

01 Communique Named A Top Technology Innovator By VARBusiness Magazine

02 takes music to heart

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