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Applied surface science, 2021-01, Vol.537, p.147871, Article 147871
2021
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Applied surface science, 2023-01, Vol.607, p.154996, Article 154996
2023
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Electronics (Basel), 2022-06, Vol.11 (11)
2022
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Electronics (Basel), 2022-11, Vol.11 (21)
2022
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ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC), 2023, p.85-88
2023
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IEEE sensors journal, 2021-03, Vol.21 (6), p.7326-7338
2021
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ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC), 2023, p.293-296
2023
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JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(6), 78, pp.920-926
2017
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Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-05, Vol.7 (21), p.644-6447
2019
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Solid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647
1997
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Microsystem technologies : sensors, actuators, systems integration, 2020-07, Vol.26 (7), p.2279-2293
2020
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Journal of micromechanics and microengineering, 2014-06, Vol.24 (6), p.65024-7
2014
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Review of scientific instruments, 1997-02, Vol.68 (2), p.1346-1347
1997
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2017 Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL), 2017, p.477-481
2017
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IEEE transactions on electron devices, 1999, Vol.46 (4), p.820-822
1999
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IEEE transactions on electron devices, 1993-05, Vol.40 (5), p.1019-1022
1993
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Solid-state electronics, 2000-09, Vol.44 (9), p.1685-1688
2000
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Solid-state electronics, 1999-08, Vol.43 (8), p.1645-1654
1999
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IEEE transactions on electron devices, 1999, Vol.46 (5), p.859-864
1999
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1985-01, Vol.3 (1), p.131-135
1985
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IEEE transactions on electron devices, 1998-04, Vol.45 (4), p.809-814
1998
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IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823
1988
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A 0.10 μm buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket
2002
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Thin solid films, 1995-12, Vol.270 (1-2), p.537-543
1995
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