UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

Volltextzugriff (PDF)

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

Volltextzugriff (PDF)

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Materials, 2024-07, Vol.17 (13), p.3343

2024

Volltextzugriff (PDF)

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Thin solid films, 2015-08, Vol.589, p.194-198

2015

Volltextzugriff (PDF)

GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

Volltextzugriff (PDF)

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

Volltextzugriff (PDF)

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

Volltextzugriff (PDF)

A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

Volltextzugriff (PDF)

Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

Volltextzugriff (PDF)

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Applied physics letters, 2023-02, Vol.122 (9)

2023

Volltextzugriff (PDF)

High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Applied physics letters, 2020-08, Vol.117 (7)

2020

Volltextzugriff (PDF)

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Applied physics letters, 2024-05, Vol.124 (20)

2024

Volltextzugriff (PDF)

Topological effects of phonons in GaN and AlGaN: A potential perspective for tuning phonon transport

Journal of applied physics, 2021-02, Vol.129 (8)

2021

Volltextzugriff (PDF)

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Applied physics letters, 2024-06, Vol.124 (24)

2024

Volltextzugriff (PDF)

Thermal stability study of gallium nitride based magnetic field sensor

Journal of applied physics, 2023-10, Vol.134 (14)

2023

Volltextzugriff (PDF)

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Applied physics letters, 2018-08, Vol.113 (7)

2018

Volltextzugriff (PDF)

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Applied physics letters, 2021-09, Vol.119 (12)

2021

Volltextzugriff (PDF)

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

Applied physics letters, 2021-03, Vol.118 (9)

2021

Volltextzugriff (PDF)

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Applied physics letters, 2018-12, Vol.113 (24)

2018

Volltextzugriff (PDF)

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Journal of applied physics, 2023-10, Vol.134 (16)

2023

Volltextzugriff (PDF)

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Applied physics letters, 2012-08, Vol.101 (8), p.82110

2012

Volltextzugriff (PDF)

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Applied physics letters, 2022-08, Vol.121 (8)

2022

Volltextzugriff (PDF)

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Applied physics letters, 2017-08, Vol.111 (9)

2017

Volltextzugriff (PDF)

Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Applied physics letters, 2023-12, Vol.123 (26)

2023

Volltextzugriff (PDF)

Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

Journal of applied physics, 2016-09, Vol.120 (10)

2016

Volltextzugriff (PDF)

1 – 25 von 437

Suche als RSS-Feed

Aktive Filter

KollektionWiley Online Library

ThemaEngineering

ThemaHeterostructures

ThemaPhysics, Applied

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(428)
Mit Volltextzugriff
(417)

Publikationsform

Artikel
(429)
Tagungsberichte
(8)

Sprache

Englisch
(437)

Erscheinungsjahr

n.n

Thema

Physical Sciences
(437)
Physics
(437)
Science & Technology
(437)
Gallium Nitrides
(352)
Aluminum Gallium Nitrides
(341)
Applied Physics
(211)
Materials Science
(149)
Technology
(142)
Aluminum Nitride
(140)
Materials Science, Multidisciplinary
(127)
Semiconductor Devices
(127)
Electron Gas
(107)
Transistors
(80)
Substrates
(79)
Epitaxial Growth
(75)
High Electron Mobility Transistors
(71)
Nanoscience & Nanotechnology
(69)
Science & Technology - Other Topics
(69)

13 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

GaN-based power devices: Physics, reliability, and perspectives

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

A GaN–SiC hybrid material for high-frequency and power electronics

Ohmic contacts to Gallium Nitride materials

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Topological effects of phonons in GaN and AlGaN: A potential perspective for tuning phonon transport

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Thermal stability study of gallium nitride based magnetic field sensor

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

Aktive Filter

Suchergebnisse filtern