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Challenges and Applications of Emerging Nonvolatile Memory Devices

Electronics (Basel), 2020-06, Vol.9 (6), p.1029

Banerjee, Writam

2020

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Recent Process of Flexible Transistor‐Structured Memory

Small (Weinheim an der Bergstrasse, Germany), 2021-03, Vol.17 (9), p.e1905332-n/a

2021

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Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Small (Weinheim an der Bergstrasse, Germany), 2022-06, Vol.18 (23), p.e2107575-n/a

2022

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Overview of emerging nonvolatile memory technologies

Nanoscale research letters, 2014-09, Vol.9 (1), p.526-526, Article 526

2014

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In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

IEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4

2017

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SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6637-6643

2021

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Hybrid Spin-Orbit Torque/Spin-Transfer Torque-Based Multibit Cell for Area-Efficient Magnetic Random Access Memory

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6318-6323

2023

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To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2106442-n/a

2022

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Self-Healing Polyurethanes with Shape Recovery

Advanced functional materials, 2014-09, Vol.24 (33), p.5261-5268

2014

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Magnetoelectric Random Access Memory-Based Circuit Design by Using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel Junctions

IEEE transactions on nanotechnology, 2015-11, Vol.14 (6), p.992-997

2015

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Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4903-4909

2021

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An Effective Selection of Memory Technologies for TCAM to Improve the Search Operations: Demonstration of Memory Efficiency in SDN Recovery

Electronics (Basel), 2024-02, Vol.13 (4), p.707

2024

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High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene

Advanced functional materials, 2022-03, Vol.32 (12), p.2109970-n/a

2022

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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Materials science & engineering. R, Reports : a review journal, 2014-09, Vol.83, p.1-59

2014

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Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge2Sb2Te5 Phase Change Memory

Advanced functional materials, 2024-04, Vol.34 (15), p.n/a

2024

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Towards the Development of Flexible Non-Volatile Memories

Advanced materials (Weinheim), 2013-10, Vol.25 (38), p.5425-5449

2013

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Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3828-3833

2019

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Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization

Advanced functional materials, 2018-10, Vol.28 (44), p.n/a

2018

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BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1042-1047

2023

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Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing

Advanced materials (Weinheim), 2018-09, Vol.30 (38), p.e1802883-n/a

2018

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High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure

Advanced materials (Weinheim), 2019-05, Vol.31 (21), p.e1804841-n/a

2019

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Two‐Terminal Multibit Optical Memory via van der Waals Heterostructure

Advanced materials (Weinheim), 2019-02, Vol.31 (7), p.e1807075-n/a

2019

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Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1394-1406

2020

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Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory via van der Waals Heterostructures

Advanced materials (Weinheim), 2019-03, Vol.31 (11), p.e1808035-n/a

2019

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Flexible Solution‐Processable Black‐Phosphorus‐Based Optoelectronic Memristive Synapses for Neuromorphic Computing and Artificial Visual Perception Applications

Advanced materials (Weinheim), 2023-07, Vol.35 (28), p.e2300446-n/a

2023

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Challenges and Applications of Emerging Nonvolatile Memory Devices

Recent Process of Flexible Transistor‐Structured Memory

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Overview of emerging nonvolatile memory technologies

In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge

Hybrid Spin-Orbit Torque/Spin-Transfer Torque-Based Multibit Cell for Area-Efficient Magnetic Random Access Memory

To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

Self-Healing Polyurethanes with Shape Recovery

Magnetoelectric Random Access Memory-Based Circuit Design by Using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel Junctions

Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)

An Effective Selection of Memory Technologies for TCAM to Improve the Search Operations: Demonstration of Memory Efficiency in SDN Recovery

High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge2Sb2Te5 Phase Change Memory

Towards the Development of Flexible Non-Volatile Memories

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization

BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing

High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure

Two‐Terminal Multibit Optical Memory via van der Waals Heterostructure

Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond

Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory via van der Waals Heterostructures

Flexible Solution‐Processable Black‐Phosphorus‐Based Optoelectronic Memristive Synapses for Neuromorphic Computing and Artificial Visual Perception Applications

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