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Challenges and Applications of Emerging Nonvolatile Memory Devices

Electronics (Basel), 2020-06, Vol.9 (6), p.1029

Banerjee, Writam

2020

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Recent Process of Flexible Transistor‐Structured Memory

Small (Weinheim an der Bergstrasse, Germany), 2021-03, Vol.17 (9), p.e1905332-n/a

2021

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Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Small (Weinheim an der Bergstrasse, Germany), 2022-06, Vol.18 (23), p.e2107575-n/a

2022

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In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

IEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4

2017

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Overview of emerging nonvolatile memory technologies

Nanoscale research letters, 2014-09, Vol.9 (1), p.526-526, Article 526

2014

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SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6637-6643

2021

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Hybrid Spin-Orbit Torque/Spin-Transfer Torque-Based Multibit Cell for Area-Efficient Magnetic Random Access Memory

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6318-6323

2023

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To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2106442-n/a

2022

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Self-Healing Polyurethanes with Shape Recovery

Advanced functional materials, 2014-09, Vol.24 (33), p.5261-5268

2014

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Magnetoelectric Random Access Memory-Based Circuit Design by Using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel Junctions

IEEE transactions on nanotechnology, 2015-11, Vol.14 (6), p.992-997

2015

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Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4903-4909

2021

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An Effective Selection of Memory Technologies for TCAM to Improve the Search Operations: Demonstration of Memory Efficiency in SDN Recovery

Electronics (Basel), 2024-02, Vol.13 (4), p.707

2024

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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Materials science & engineering. R, Reports : a review journal, 2014-09, Vol.83, p.1-59

2014

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High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene

Advanced functional materials, 2022-03, Vol.32 (12), p.2109970-n/a

2022

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Towards the Development of Flexible Non-Volatile Memories

Advanced materials (Weinheim), 2013-10, Vol.25 (38), p.5425-5449

2013

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Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge2Sb2Te5 Phase Change Memory

Advanced functional materials, 2024-04, Vol.34 (15), p.n/a

2024

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Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization

Advanced functional materials, 2018-10, Vol.28 (44), p.n/a

2018

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BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1042-1047

2023

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High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure

Advanced materials (Weinheim), 2019-05, Vol.31 (21), p.e1804841-n/a

2019

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Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing

Advanced materials (Weinheim), 2018-09, Vol.30 (38), p.e1802883-n/a

2018

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Two‐Terminal Multibit Optical Memory via van der Waals Heterostructure

Advanced materials (Weinheim), 2019-02, Vol.31 (7), p.e1807075-n/a

2019

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Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory via van der Waals Heterostructures

Advanced materials (Weinheim), 2019-03, Vol.31 (11), p.e1808035-n/a

2019

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Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1394-1406

2020

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Dynamic Power Reduction in TCAM Using Advanced Selective Pre-Charging of Match Lines

Electronics (Basel), 2023-09, Vol.12 (17), p.3691

2023

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A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1698-1705

2022

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