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InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Journal of crystal growth, 2019-03, Vol.510, p.18-22

2019

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Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

Infrared physics & technology, 2016-05, Vol.76, p.542-545

2016

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ZIF-8, Zn(NA) and Zn(INA) MOFs as chemical selective sensors of ammonia, formaldehyde and ethanol gases

Materials chemistry and physics, 2020-02, Vol.241, p.122357, Article 122357

2020

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Comprehensive characterization of InAs/GaSb LWIR superlattices with varying InAs layer thickness by molecular beam epitaxy

Vacuum, 2024-02, Vol.220, p.112855, Article 112855

2024

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Differential regulation of tefluthrin and telmisartan on the gating charges of INa activation and inactivation as well as on resurgent and persistent INa in a pituitary cell line (GH3)

Toxicology letters, 2018-03, Vol.285, p.104-112

2018

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O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Journal of crystal growth, 2019-04, Vol.511, p.56-60

2019

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Priming of seeds with INA and its transgenerational effect in common bean (Phaseolus vulgaris L.) plants

Plant science (Limerick), 2021-04, Vol.305, p.110834-110834, Article 110834

2021

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Experimental and numerical investigations on the separation performance of [Cu(INA)2] adsorbent for CH4 recovery by VPSA from oxygen-bearing coal mine methane

Chemical engineering journal (Lausanne, Switzerland : 1996), 2021-03, Vol.408, p.127238, Article 127238

2021

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Determination and assessment of GNSS-derived precipitable water vapor in Indonesia using Ina-CORS

Advances in space research, 2024-01, Vol.73 (1), p.386-403

2024

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Ammonia capture and flexible transformation of M-2(INA) (M=Cu, Co, Ni, Cd) series materials

Journal of hazardous materials, 2016-04, Vol.306, p.340-347

2016

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Expression of concern:Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots, Jae-Young Leem, Minhyun Jeon, Jewon Lee, Guansik Cho, Cheul-Ro Lee, Jong Su Kim, Se-Kyung Kang, S.I. Ban, J.I. Lee, Hyung Koun Cho, Journal of Crystal Growth, Volume 252, Issue 4, May 2003, Pages 493–498

Journal of crystal growth, 2021-04, Vol.560-561, p.126037, Article 126037

Derby, Jeffrey J.

2021

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Plasma deposited amorphous silicon passivation layers on InAs surfaces

Surface & coatings technology, 2024-01, Vol.476, p.130257, Article 130257

2024

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InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(0 0 1) substrate

Journal of crystal growth, 2020-02, Vol.531, p.125342, Article 125342

2020

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Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications

Applied surface science, 2023-06, Vol.623, p.156899, Article 156899

2023

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Interactions between Sb and As on InAs(0 0 1) surfaces

Journal of crystal growth, 2018-10, Vol.500, p.68-73

2018

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Atomistic behaviour of (n×3)-reconstructed areas of InAs–GaAs(001) surface at the growth condition

Journal of crystal growth, 2017-11, Vol.477, p.104-109

2017

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Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition

Journal of crystal growth, 2018-11, Vol.502, p.71-75

2018

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InAs nanowire growth on oxide-masked 〈111〉 silicon

Journal of crystal growth, 2012-04, Vol.344 (1), p.31-37

2012

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Electronic structure of Bi nanolines on InAs(100)

Applied surface science, 2023-02, Vol.611, p.155436, Article 155436

2023

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Flat and twin-free InAs layer growth on Ge (1 1 1) substrates

Journal of crystal growth, 2020-08, Vol.544, p.125690, Article 125690

2020

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InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate

Journal of crystal growth, 2016-06, Vol.443, p.85-89

2016

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InAs-based InAs/GaAsSb type-II superlattices: Growth and characterization

Journal of crystal growth, 2015-04, Vol.416, p.130-133

2015

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Coherent InAs/CdSe and InAs/ZnTe/CdSe heterovalent interfaces: Electronic and chemical structure

Applied surface science, 2018-08, Vol.448, p.455-464

2018

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Mid-wave infrared p+-B-n InAs/InAsSb type-II superlattice photodetector with an AlAsSb/InAsSb superlattice barrier

Infrared physics & technology, 2022-03, Vol.121, p.104015, Article 104015

2022

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Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission

Journal of crystal growth, 2021-03, Vol.557, p.126010, Article 126010

2021

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InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

ZIF-8, Zn(NA) and Zn(INA) MOFs as chemical selective sensors of ammonia, formaldehyde and ethanol gases

Comprehensive characterization of InAs/GaSb LWIR superlattices with varying InAs layer thickness by molecular beam epitaxy

Differential regulation of tefluthrin and telmisartan on the gating charges of INa activation and inactivation as well as on resurgent and persistent INa in a pituitary cell line (GH3)

O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Priming of seeds with INA and its transgenerational effect in common bean (Phaseolus vulgaris L.) plants

Experimental and numerical investigations on the separation performance of [Cu(INA)2] adsorbent for CH4 recovery by VPSA from oxygen-bearing coal mine methane

Determination and assessment of GNSS-derived precipitable water vapor in Indonesia using Ina-CORS

Ammonia capture and flexible transformation of M-2(INA) (M=Cu, Co, Ni, Cd) series materials

Plasma deposited amorphous silicon passivation layers on InAs surfaces

InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(0 0 1) substrate

Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications

Interactions between Sb and As on InAs(0 0 1) surfaces

Atomistic behaviour of (n×3)-reconstructed areas of InAs–GaAs(001) surface at the growth condition

Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition

InAs nanowire growth on oxide-masked 〈111〉 silicon

Electronic structure of Bi nanolines on InAs(100)

Flat and twin-free InAs layer growth on Ge (1 1 1) substrates

InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate

InAs-based InAs/GaAsSb type-II superlattices: Growth and characterization

Coherent InAs/CdSe and InAs/ZnTe/CdSe heterovalent interfaces: Electronic and chemical structure

Mid-wave infrared p+-B-n InAs/InAsSb type-II superlattice photodetector with an AlAsSb/InAsSb superlattice barrier

Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission

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