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A 0.1-1.8 GHz, 100 W GaN HEMT Power Amplifier Module

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, p.1-4

2010

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A 0.1-13 GHz Wide Range Multi-Modulus Divider with Adaptive Sensitivity for Broad Band Operation

2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS), 2018, p.901-904

2018

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A 0.1-20.1-GHz Wideband Noise-Canceling gm-Boosted CMOS LNA With Gain-Reuse

IEEE transactions on microwave theory and techniques, 2024-05, Vol.72 (5), p.2990-3000

2024

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A 0.1 Megapixel THz camera with 17 degree field of view for large area single shot imaging

2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014, p.1-2

2014

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0.1 μm Schottky-collector AlAs/GaAs resonant tunneling diodes

IEEE electron device letters, 1994-08, Vol.15 (8), p.295-297

1994

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A 0.1-nW-1- \mu W Energy-Efficient All-Dynamic Versatile Capacitance-to-Digital Converter

IEEE journal of solid-state circuits, 2019-07, Vol.54 (7), p.1841-1851

2019

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0.1-μm T-gate Al-free InP/InGaAs/InP pHEMTs for W-band applications using a nitrogen carrier for LP-MOCVD growth

IEEE electron device letters, 1997-04, Vol.18 (4), p.144-146

1997

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A 0.10 μm NMOSFET, made by hybrid lithography (e-beam/DUV), with Indium pocket and specific gate reoxidation process

Microelectronic engineering, 1996-01, Vol.30 (1-4), p.459-462

1996

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0.25-V Class-AB CMOS Capacitance Multiplier and Precision Rectifiers

IEEE transactions on very large scale integration (VLSI) systems, 2019-04, Vol.27 (4), p.830-842

2019

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0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

Solid-state electronics, 2002-03, Vol.46 (3), p.379-386

2002

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A 0.32nJ/bit noncoherent UWB impulse Radio transceiver with baseband synchronization and a fully digital transmitter

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2013, p.17-20

2013

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A 0.34-571nW All-Dynamic Versatile Sensor Interface for Temperature, Capacitance, and Resistance Sensing

ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC), 2019, p.161-164

2019

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A 0.35-mW 70-GHz Self-Resonant E-TSPC Frequency Divider With Backgate Adjustment

IEEE transactions on microwave theory and techniques, 2022-04, Vol.70 (4), p.2236-2245

2022

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0.3V Bulk-Driven Fully Differential Buffer with High Figures of Merit

Journal of low power electronics and applications, 2022-09, Vol.12 (3), p.35

2022

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A 0.41mW Band-Tunable 6th-Order IF Filter with 40 ns Settling Time in 45 nm CMOS RFSOI

2019 14th European Microwave Integrated Circuits Conference (EuMIC), 2019, p.212-215

2019

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0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

IEEE photonics technology letters, 2003-07, Vol.15 (7), p.894-896

2003

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A ± 0.75-V Compact CMOS Class-AB Current-Mode Exponential Variable Gain Amplifier

IEEE transactions on circuits and systems. II, Express briefs, 2007-12, Vol.54 (12), p.1042

2007

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0.8W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm

Electronics letters, 2004-05, Vol.40 (10), p.601

2004

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A 0.91mW/element pitch-matched front-end ASIC with integrated subarray beamforming ADC for miniature 3D ultrasound probes

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.186-188

2018

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A 1.1-/0.9-nA Temperature-Independent 213-/565-ppm/°C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI

IEEE journal of solid-state circuits, 2023-08, Vol.58 (8), p.2239-2251

2023

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A 1.2-mW/Channel Pitch-Matched Transceiver ASIC Employing a Boxcar-Integration-Based RX Micro-Beamformer for High-Resolution 3-D Ultrasound Imaging

IEEE journal of solid-state circuits, 2023-09, Vol.58 (9), p.1-12

2023

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A 1.2-V 140-nW 10-bit Sigma-Delta Modulator for Electroencephalogram Applications

IEEE transactions on biomedical circuits and systems, 2008-09, Vol.2 (3), p.223-230

2008

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A 1.2 V Current-Mode RMS-to-DC Converter Based on a Novel Two-Quadrant Electronically Simulated MOS Translinear Loop

2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020, p.1-1

2020

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A 1.2-V Current-Mode RMS-to-DC Converter Based on a Novel Two-Quadrant Electronically Simulated MOS Translinear Loop

IEEE transactions on circuits and systems. II, Express briefs, 2020-03, Vol.67 (3), p.420-424

2020

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1.2 V full-swing BiDPL logic gate

Microelectronics, 1998-07, Vol.29 (7), p.421-429

1998

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1 – 25 von 60.814

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A 0.1-1.8 GHz, 100 W GaN HEMT Power Amplifier Module

A 0.1-13 GHz Wide Range Multi-Modulus Divider with Adaptive Sensitivity for Broad Band Operation

A 0.1-20.1-GHz Wideband Noise-Canceling gm-Boosted CMOS LNA With Gain-Reuse

A 0.1 Megapixel THz camera with 17 degree field of view for large area single shot imaging

0.1 μm Schottky-collector AlAs/GaAs resonant tunneling diodes

A 0.1-nW-1- \mu W Energy-Efficient All-Dynamic Versatile Capacitance-to-Digital Converter

0.1-μm T-gate Al-free InP/InGaAs/InP pHEMTs for W-band applications using a nitrogen carrier for LP-MOCVD growth

A 0.10 μm NMOSFET, made by hybrid lithography (e-beam/DUV), with Indium pocket and specific gate reoxidation process

0.25-V Class-AB CMOS Capacitance Multiplier and Precision Rectifiers

0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

A 0.32nJ/bit noncoherent UWB impulse Radio transceiver with baseband synchronization and a fully digital transmitter

A 0.34-571nW All-Dynamic Versatile Sensor Interface for Temperature, Capacitance, and Resistance Sensing

A 0.35-mW 70-GHz Self-Resonant E-TSPC Frequency Divider With Backgate Adjustment

0.3V Bulk-Driven Fully Differential Buffer with High Figures of Merit

A 0.41mW Band-Tunable 6th-Order IF Filter with 40 ns Settling Time in 45 nm CMOS RFSOI

0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

A ± 0.75-V Compact CMOS Class-AB Current-Mode Exponential Variable Gain Amplifier

0.8W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm

A 0.91mW/element pitch-matched front-end ASIC with integrated subarray beamforming ADC for miniature 3D ultrasound probes

A 1.1-/0.9-nA Temperature-Independent 213-/565-ppm/°C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI

A 1.2-mW/Channel Pitch-Matched Transceiver ASIC Employing a Boxcar-Integration-Based RX Micro-Beamformer for High-Resolution 3-D Ultrasound Imaging

A 1.2-V 140-nW 10-bit Sigma-Delta Modulator for Electroencephalogram Applications

A 1.2 V Current-Mode RMS-to-DC Converter Based on a Novel Two-Quadrant Electronically Simulated MOS Translinear Loop

A 1.2-V Current-Mode RMS-to-DC Converter Based on a Novel Two-Quadrant Electronically Simulated MOS Translinear Loop

1.2 V full-swing BiDPL logic gate

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