UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

Volltextzugriff (PDF)

Demonstration of a MOT in a sub-millimeter membrane hole

Scientific reports, 2021-04, Vol.11 (1), p.8807-8807, Article 8807

2021

Volltextzugriff (PDF)

High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD04

2019

Volltextzugriff (PDF)

Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

IEEE transactions on semiconductor manufacturing, 2019-11, Vol.32 (4), p.473-477

2019

Volltextzugriff (PDF)

Ultra-wide band gap AlGaN polarization-doped field effect transistor

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.74103

2018

Volltextzugriff (PDF)

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

Volltextzugriff (PDF)

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Materials, 2012-12, Vol.5 (12), p.2498-2520

2012

Volltextzugriff (PDF)

Al-rich AlGaN based transistors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-03, Vol.38 (2)

2020

Volltextzugriff (PDF)

Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-03, Vol.37 (2)

2019

Volltextzugriff (PDF)

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Journal of applied physics, 2021-07, Vol.130 (4)

2021

Volltextzugriff (PDF)

Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment

Applied physics letters, 2019-03, Vol.114 (11)

2019

Volltextzugriff (PDF)

Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-03, Vol.35 (2)

2017

Volltextzugriff (PDF)

Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors

Journal of electronic materials, 2019-09, Vol.48 (9), p.5581-5585

2019

Volltextzugriff (PDF)

AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN

Applied physics letters, 2019-02, Vol.114 (5)

2019

Volltextzugriff (PDF)

Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-05, Vol.29 (3)

2011

Volltextzugriff (PDF)

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-03, Vol.38 (2)

2020

Volltextzugriff (PDF)

Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-05, Vol.36 (3)

2018

Volltextzugriff (PDF)

Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

Journal of applied physics, 2018-03, Vol.123 (11), p.114502

2018

Volltextzugriff (PDF)

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-01, Vol.38 (2)

2020

Volltextzugriff (PDF)

CMOS compatible metal stacks for suppression of secondary grains in Sc0.125Al0.875N

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-03, Vol.37 (2)

2019

Volltextzugriff (PDF)

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-04, Vol.38 (3)

2020

Volltextzugriff (PDF)

Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment

Applied physics letters, 2019-03, Vol.114 (11)

2019

Volltextzugriff (PDF)

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-05, Vol.38 (3)

2020

Volltextzugriff (PDF)

Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-07, Vol.33 (4)

2015

Volltextzugriff (PDF)

Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode

Solid-state electronics, 2019-01, Vol.151 (C), p.47-51

2019

Volltextzugriff (PDF)

1 – 25 von 803

Suche als RSS-Feed

Aktive Filter

KollektionTaylor & Francis:Master (3349 titles)

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(684)
Mit Volltextzugriff
(623)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(464)
Life Sciences & Biomedicine
(372)
Humans
(249)
Female
(148)
Male
(137)
Adult
(81)
Middle Aged
(71)
Physical Sciences
(70)
Animals
(68)
Biological And Medical Sciences
(64)
Social Sciences
(54)
Oncology
(53)
Aged
(48)
Medical Sciences
(40)
Neurosciences & Neurology
(38)
Risk Factors
(38)
Technology
(38)
Child
(35)
Psychology
(35)
Science & Technology - Other Topics
(34)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(6)

Menü

Weitere Dienste

Einstellungen

An AlN/Al0.85Ga0.15N high electron mobility transistor

Demonstration of a MOT in a sub-millimeter membrane hole

High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

Ultra-wide band gap AlGaN polarization-doped field effect transistor

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Al-rich AlGaN based transistors

Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment

Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN

Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors

AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN

Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators

Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

CMOS compatible metal stacks for suppression of secondary grains in Sc0.125Al0.875N

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode

Aktive Filter

Suchergebnisse filtern