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Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.60-71

2023

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High-mobility carbon-nanotube thin-film transistors on a polymeric substrate

Applied physics letters, 2005-01, Vol.86 (3), p.033105-033105-3

2005

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Packing density of HS(CH2)nCOOH self-assembled monolayers

Analyst (London), 2011, Vol.136 (23), p.4935-4949

2011

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Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2151-2157

2019

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Scaling projections for Sb-based p-channel FETs

Solid-state electronics, 2010-11, Vol.54 (11), p.1349-1358

2010

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Nonlinear Thermoelectroelastic Analysis of III-N Semiconductor Devices

IEEE journal of the Electron Devices Society, 2017-09, Vol.5 (5), p.320-334

Ancona, M. G.

2017

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High mobility p-channel HFETs using strained Sb-based materials

Electronics letters, 2007, Vol.43 (15), p.834-835

2007

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Selective DNA-Mediated Assembly of Gold Nanoparticles on Electroded Substrates

Langmuir, 2008-09, Vol.24 (18), p.10245-10252

2008

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Packing density of HS(CH2)(n)COOH self-assembled monolayers

Analyst (London), 2011-12, Vol.136 (23), p.4935-4949

2011

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Enhanced plasmon coupling in crossed dielectric/metal nanowire composite geometries and applications to surface-enhanced Raman spectroscopy

Applied physics letters, 2007-02, Vol.90 (9)

2007

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Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

Applied physics letters, 2012-01, Vol.100 (4), p.042102-042102-3

2012

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Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

Applied physics letters, 2002-04, Vol.80 (17), p.3219-3221

2002

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Patterning of Narrow Au Nanocluster Lines Using V2O5 Nanowire Masks and Ion-Beam Milling

Nano letters, 2003-02, Vol.3 (2), p.135-138

2003

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Analyte kinetics in a nanocluster-based chemiresistor: A case study

Sensors and actuators. B, Chemical, 2013-02, Vol.177, p.936-946

2013

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Development of an ensemble Monte Carlo simulator for high-power semiconductor devices with self-consistent electromagnetism and GPU implementation

Solid-state electronics, 2023-01, Vol.199, p.108487, Article 108487

2023

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Non-local transport effects in semiconductors under low-field conditions

Solid-state electronics, 2023-02, Vol.200, p.108553, Article 108553

2023

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Design of computationally useful single-electron digital circuits

Journal of applied physics, 1996-01, Vol.79 (1), p.526-539

Ancona, M. G.

1996

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Diffusion-drift modeling of carbon-based nanowire FETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.337-340

2015

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Electron transport in nanocluster films with random voids

IEEE transactions on nanotechnology, 2003-06, Vol.2 (2), p.75-81

2003

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Coupled 2D/3D transport: Analysis of graphene-SiC devices

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.161-164

2015

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Fully-coupled electromechanical analysis of stress-related failure in GaN HEMTs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2276-2278

2011

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Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation

Journal of applied physics, 2012-04, Vol.111 (7), p.074504-074504-16

2012

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N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.894-897

2012

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Interface Scattering as a Non-local Transport Phenomenon in Semiconductors

IEEE journal of the Electron Devices Society, 2023-01, p.1-1

2023

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Modeling cyclic voltammetry of electrode-immobilized gold nanoclusters

Electrochimica acta, 2003-12, Vol.48 (28), p.4157-4165

2003

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Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors

High-mobility carbon-nanotube thin-film transistors on a polymeric substrate

Packing density of HS(CH2)nCOOH self-assembled monolayers

Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study

Scaling projections for Sb-based p-channel FETs

Nonlinear Thermoelectroelastic Analysis of III-N Semiconductor Devices

High mobility p-channel HFETs using strained Sb-based materials

Selective DNA-Mediated Assembly of Gold Nanoparticles on Electroded Substrates

Packing density of HS(CH2)(n)COOH self-assembled monolayers

Enhanced plasmon coupling in crossed dielectric/metal nanowire composite geometries and applications to surface-enhanced Raman spectroscopy

Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

Patterning of Narrow Au Nanocluster Lines Using V2O5 Nanowire Masks and Ion-Beam Milling

Analyte kinetics in a nanocluster-based chemiresistor: A case study

Development of an ensemble Monte Carlo simulator for high-power semiconductor devices with self-consistent electromagnetism and GPU implementation

Non-local transport effects in semiconductors under low-field conditions

Design of computationally useful single-electron digital circuits

Diffusion-drift modeling of carbon-based nanowire FETs

Electron transport in nanocluster films with random voids

Coupled 2D/3D transport: Analysis of graphene-SiC devices

Fully-coupled electromechanical analysis of stress-related failure in GaN HEMTs

Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation

N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs

Interface Scattering as a Non-local Transport Phenomenon in Semiconductors

Modeling cyclic voltammetry of electrode-immobilized gold nanoclusters

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