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Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Nano letters, 2017-02, Vol.17 (2), p.1049-1055

2017

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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Journal of applied physics, 2015-04, Vol.117 (13)

2015

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Toward Smart and Ultra‐efficient Solid‐State Lighting

Advanced optical materials, 2014-09, Vol.2 (9), p.809-836

2014

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Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

Optics express, 2011-12, Vol.19 (25), p.25528-25534

2011

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Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array

Nano letters, 2013-09, Vol.13 (9), p.4317-4325

2013

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Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion

Nano letters, 2006-07, Vol.6 (7), p.1396-1400

2006

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Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Nano letters, 2014-10, Vol.14 (10), p.5616-5620

2014

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Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

AIP advances, 2017-10, Vol.7 (10), p.105312-105312-7

2017

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Log-Pile TiO2 Photonic Crystal for Light Control at Near-UV and Visible Wavelengths

Advanced materials (Weinheim), 2010-01, Vol.22 (4), p.487-491

2010

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III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

Optical materials express, 2018-11, Vol.8 (11), p.3543

2018

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III-nitride core-shell nanowire arrayed solar cells

Nanotechnology, 2012-05, Vol.23 (19), p.194007-1-6

2012

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Phase degradation in BxGa1−xN films grown at low temperature by metalorganic vapor phase epitaxy

Journal of crystal growth, 2017-04, Vol.464, p.190-196

2017

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Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

Nano letters, 2013-11, Vol.13 (11), p.5123-5128

2013

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Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers

Nano letters, 2005-06, Vol.5 (6), p.1039-1044

2005

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Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs

Physica status solidi. A, Applications and materials science, 2014-04, Vol.211 (4), p.748-751

2014

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Multi-Colour Nanowire Photonic Crystal Laser Pixels

Scientific reports, 2013-10, Vol.3 (1), p.2982-2982, Article 2982

2013

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Influence of pH on the Quantum-Size-Controlled Photoelectrochemical Etching of Epitaxial InGaN Quantum Dots

Journal of physical chemistry. C, 2015-12, Vol.119 (50), p.28194-28198

2015

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Photoelectrochemical etching of epitaxial InGaN thin films: self-limited kinetics and nanostructuring

Electrochimica acta, 2015-04, Vol.162 (C), p.163-168

2015

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Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

Optical materials express, 2017-10, Vol.7 (10), p.3634

2017

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Nonradiative energy transfer between colloidal quantum dot-phosphors and nanopillar nitride LEDs

Optics express, 2012-03, Vol.20 Suppl 2 (S2), p.A333-A339

2012

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Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration

ACS photonics, 2017-09, Vol.4 (9), p.2165-2170

2017

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Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals

Journal of crystal growth, 2002-05, Vol.240 (3), p.508-512

2002

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Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

Journal of physical chemistry. C, 2014-06, Vol.118 (25), p.13330-13345

2014

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Identifying threading dislocations in GaN films and substrates by electron channelling

Journal of microscopy (Oxford), 2011-12, Vol.244 (3), p.311-319

2011

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Solid‐State Lighting: Toward Smart and Ultra‐efficient Solid‐State Lighting (Advanced Optical Materials 9/2014)

Advanced optical materials, 2014-09, Vol.2 (9), p.803-803

2014

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Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Toward Smart and Ultra‐efficient Solid‐State Lighting

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array

Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion

Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Log-Pile TiO2 Photonic Crystal for Light Control at Near-UV and Visible Wavelengths

III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

III-nitride core-shell nanowire arrayed solar cells

Phase degradation in BxGa1−xN films grown at low temperature by metalorganic vapor phase epitaxy

Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers

Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs

Multi-Colour Nanowire Photonic Crystal Laser Pixels

Influence of pH on the Quantum-Size-Controlled Photoelectrochemical Etching of Epitaxial InGaN Quantum Dots

Photoelectrochemical etching of epitaxial InGaN thin films: self-limited kinetics and nanostructuring

Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

Nonradiative energy transfer between colloidal quantum dot-phosphors and nanopillar nitride LEDs

Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration

Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals

Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

Identifying threading dislocations in GaN films and substrates by electron channelling

Solid‐State Lighting: Toward Smart and Ultra‐efficient Solid‐State Lighting (Advanced Optical Materials 9/2014)

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