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β-Gallium oxide power electronics

APL materials, 2022-02, Vol.10 (2), p.029201-029201-40

2022

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High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

Nano letters, 2018-05, Vol.18 (5), p.3125-3131

2018

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III-N polarization-graded transistors for millimeter-wave applications—Understanding and future potential

Applied physics letters, 2022-10, Vol.121 (14)

2022

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AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

Applied physics letters, 2013-08, Vol.103 (8), p.81107

2013

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Low resistance GaN/InGaN/GaN tunnel junctions

Applied physics letters, 2013-03, Vol.102 (11)

2013

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Optical signatures of deep level defects in Ga2O3

Applied physics letters, 2018-06, Vol.112 (24)

2018

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Large area single crystal (0001) oriented MoS2

Applied physics letters, 2013-06, Vol.102 (25)

2013

Volltextzugriff (PDF)

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Journal of applied physics, 2020-06, Vol.127 (21)

2020

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Polarization-engineered GaN/InGaN/GaN tunnel diodes

Applied physics letters, 2010-11, Vol.97 (20), p.203502-203502-3

2010

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Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.704-708

2011

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Recent progress of tunnel junction-based ultra-violet light emitting diodes

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC0805

2019

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Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Applied physics letters, 2011-09, Vol.99 (13), p.133503-133503-3

2011

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Demonstration of forward inter-band tunneling in GaN by polarization engineering

Applied physics letters, 2011-12, Vol.99 (23), p.233504-233504-3

2011

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Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Frequency dispersion in III-V metal-oxide-semiconductor capacitors

Applied physics letters, 2012-06, Vol.100 (23), p.233510-233510-4

2012

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Effect of Optical Phonon Scattering on the Performance of GaN Transistors

IEEE electron device letters, 2012-05, Vol.33 (5), p.709-711

2012

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Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates

Journal of applied physics, 2017-03, Vol.121 (9)

2017

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Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Applied physics letters, 2011-12, Vol.99 (23)

2011

Volltextzugriff (PDF)

Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy

Applied physics letters, 2020-05, Vol.116 (20)

2020

Volltextzugriff (PDF)

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas

Applied physics letters, 2019-12, Vol.115 (26)

2019

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Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors

Applied physics letters, 2019-07, Vol.115 (4)

2019

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Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Applied physics letters, 2017-05, Vol.110 (20)

2017

Volltextzugriff (PDF)

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β-Gallium oxide power electronics

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

III-N polarization-graded transistors for millimeter-wave applications—Understanding and future potential

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

Low resistance GaN/InGaN/GaN tunnel junctions

Optical signatures of deep level defects in Ga2O3

Large area single crystal (0001) oriented MoS2

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Polarization-engineered GaN/InGaN/GaN tunnel diodes

Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

Recent progress of tunnel junction-based ultra-violet light emitting diodes

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Demonstration of forward inter-band tunneling in GaN by polarization engineering

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

Effect of Optical Phonon Scattering on the Performance of GaN Transistors

Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas

Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

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