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The Al--Ga--Sb Ternary Phase Diagram and Its Application to Solution Growth

Journal of crystal growth, 1979-07, Vol.47 (1), p.100-108

1979

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Prediction of abrasive punch wear in copper alloy thin sheet blanking

Wear, 2015-09, Vol.338-339, p.144-154

2015

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Numerical and experimental analyses of punch wear in the blanking of copper alloy thin sheet

Wear, 2012-08, Vol.296 (1-2), p.598-606

2012

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Roughness effect on photoluminescence of cerium doped zinc oxide thin films

Optical materials, 2009, Vol.31 (9), p.1357-1361

2009

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Relationship between structure and optical properties in rare earth-doped hafnium and silicon oxides: Modeling and spectroscopic measurements

Journal of non-crystalline solids, 2008-11, Vol.354 (42), p.4719-4722

2008

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Simulation of Eu3+ luminescence spectra of borosilicate glasses by molecular dynamics calculations

Optical materials, 2008-07, Vol.30 (11), p.1689-1693

2008

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TOWARD HIGH-PERFORMANCE, GREENER, AND LOW-VULNERABILITY MUNITIONS WITH THE RIGHTTRAC TECHNOLOGY DEMONSTRATOR PROGRAM

International journal of energetic materials and chemical propulsion, 2014, Vol.13 (1), p.7-36

2014

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Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

Semiconductor science and technology, 2003-12, Vol.18 (12), p.1015-1023

2003

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Defect morphology and strain of CVD grown 3C-SiC layers: effect of the carbonization process

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.561-565

2005

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Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism

Materials science forum, 2006-10, Vol.527-529, p.287-290

2006

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Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)

Materials science forum, 2006-10, Vol.527-529, p.1563-1566

2006

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Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process

Materials science forum, 2004-06, Vol.457-460, p.351-354

2004

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Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers

Materials science forum, 2004-01, Vol.457-460, p.175-180

2004

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Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

Materials science forum, 2004-01, Vol.457-460, p.735-738

2004

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Interfacial strain in 3C-SiC/Si(100) pseudo-substrates for cubic nitride epitaxy

Physica Status Solidi A (applications and materials science), 2003-01, Vol.195 (1), p.18-25

2003

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Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers

Materials science forum, 2004-01, Vol.457-460, p.313-316

2004

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Comparative Evaluation of Free-Standing 3C-SiC Crystals

Materials Science Forum, 2005-05, Vol.483-485, p.229-232

2005

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Analysis of SiC Islands Formation during First Steps of Si Carbonization Process

Materials Science Forum, 2005-05, Vol.483-485, p.555-558

2005

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Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy

Materials Science Forum, 2005-05, Vol.483-485, p.295-298

2005

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Planar Defects, Voids and their Relationship in 3C-SiC Layers

Materials Science Forum, 2005-05, Vol.483-485, p.189-192

2005

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Is the Al Solubility Limit in SiC Temperature Dependent or not?

Materials Science Forum, 2005-05, Vol.483-485, p.125-128

2005

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Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy

Materials science forum, 2004-01, Vol.457-460, p.277-280

2004

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Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)

Materials science forum, 2004-01, Vol.457-460, p.281-284

2004

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Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing

Materials Science Forum, 2005-05, Vol.483-485, p.233-236

2005

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Description of rough surfaces using conformal equivalent structure concept: Part 1. Stereological approach

Wear, 2001-03, Vol.248 (1), p.82-91

2001

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The Al--Ga--Sb Ternary Phase Diagram and Its Application to Solution Growth

Prediction of abrasive punch wear in copper alloy thin sheet blanking

Numerical and experimental analyses of punch wear in the blanking of copper alloy thin sheet

Roughness effect on photoluminescence of cerium doped zinc oxide thin films

Relationship between structure and optical properties in rare earth-doped hafnium and silicon oxides: Modeling and spectroscopic measurements

Simulation of Eu3+ luminescence spectra of borosilicate glasses by molecular dynamics calculations

TOWARD HIGH-PERFORMANCE, GREENER, AND LOW-VULNERABILITY MUNITIONS WITH THE RIGHTTRAC TECHNOLOGY DEMONSTRATOR PROGRAM

Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

Defect morphology and strain of CVD grown 3C-SiC layers: effect of the carbonization process

Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism

Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)

Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process

Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

Interfacial strain in 3C-SiC/Si(100) pseudo-substrates for cubic nitride epitaxy

Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers

Comparative Evaluation of Free-Standing 3C-SiC Crystals

Analysis of SiC Islands Formation during First Steps of Si Carbonization Process

Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy

Planar Defects, Voids and their Relationship in 3C-SiC Layers

Is the Al Solubility Limit in SiC Temperature Dependent or not?

Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy

Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)

Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing

Description of rough surfaces using conformal equivalent structure concept: Part 1. Stereological approach

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