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Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance

Applied physics letters, 2023-08, Vol.123 (7)

2023

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Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal‐Organic Chemical Vapor Deposition‐Grown GeSe2

Advanced optical materials, 2024-01, Vol.12 (2), p.n/a

2024

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Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N‑ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

ACS applied materials & interfaces, 2016-10, Vol.8 (40), p.26924-26931

2016

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Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (12), p.3139-3145

2017

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Area-selective atomic layer deposition on 2D monolayer lateral superlattices

Nature communications, 2024-03, Vol.15 (1), p.2138-2138, Article 2138

2024

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Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Progress in photovoltaics, 2018-09, Vol.26 (9), p.745-751

2018

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Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-03, Vol.9 (11), p.382-3825

2021

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Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings (Basel), 2020-07, Vol.10 (7), p.692

2020

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Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics

Physica status solidi. PSS-RRL. Rapid research letters, 2020-10, Vol.14 (10), p.n/a

2020

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Optimized Method for Low‐Energy and Highly Reliable Multibit Operation in a HfO2‐Based Resistive Switching Device

Advanced electronic materials, 2018-12, Vol.4 (12), p.n/a

2018

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Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition

Applied physics letters, 2006-11, Vol.89 (22), p.222105-222105-3

2006

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Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications

ACS applied materials & interfaces, 2024-04, Vol.16 (18), p.23606-23614

2024

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Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-12, Vol.41 (6)

2023

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High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition

ACS applied materials & interfaces, 2019-04, Vol.11 (16), p.14892-14901

2019

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Highly efficient photocatalytic methylene blue degradation over Sn(O,S)/TiO2 photocatalyst fabricated via powder atomic layer deposition of SnO and subsequent sulfurization

Materials letters, 2020-08, Vol.272, p.127868, Article 127868

2020

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Vinyl-addition copolymerization of norbornene and 1-octene catalyzed by a non-bridged half-titanocene with a tetrazole-phenoxy ligand

Polymer (Guilford), 2024-03, Vol.295, p.126679, Article 126679

2024

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Atomic-layer-deposited SnO film using novel Sn(dmamb)2 precursor for p-channel thin film transistor

Applied surface science, 2021-05, Vol.547, p.148758, Article 148758

2021

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Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis(N-ethoxy-2,2-dimethyl propanamido)tin precursor

Ceramics international, 2019-03, Vol.45 (4), p.5124-5132

2019

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Polycrystalline and high purity SnO2 films by plasma-enhanced atomic layer deposition using H2O plasma at very low temperatures of 60–90 °C

Vacuum, 2022-02, Vol.196, p.110739, Article 110739

2022

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Atomic layer deposition of pure In2O3 films for a temperature range of 200–300 °C using heteroleptic liquid In(DMAMP)2(OiPr) precursor

Ceramics international, 2020-02, Vol.46 (3), p.3139-3143

2020

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Palladium(II)-Catalyzed Synthesis of a Vinyl-Addition Ultrahigh-Molecular-Weight Polynorbornene Copolymer with an Entanglement Network for Enhanced Fracture Resistance

Macromolecules, 2024-01, Vol.57 (2), p.565-573

2024

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Plasma-Enhanced Atomic Layer Deposition of Ni

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.05FA11-05FA11-4

2010

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Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Nonplanar and Flexible Electronics

ACS applied materials & interfaces, 2020-01, Vol.12 (2), p.2679-2686

2020

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Atomic layer deposition of nickel oxide films using Ni ( dmamp ) 2 and water

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-07, Vol.23 (4), p.1238-1243

2005

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Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Thin Films from a Zero-Valent (1,5-Hexadiene)(1-isopropyl-4-methylbenzene)ruthenium Complex and O2

Chemistry of materials, 2014-12, Vol.26 (24), p.7083-7090

2014

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Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance

Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal‐Organic Chemical Vapor Deposition‐Grown GeSe2

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N‑ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

Area-selective atomic layer deposition on 2D monolayer lateral superlattices

Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics

Optimized Method for Low‐Energy and Highly Reliable Multibit Operation in a HfO2‐Based Resistive Switching Device

Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition

Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition

Highly efficient photocatalytic methylene blue degradation over Sn(O,S)/TiO2 photocatalyst fabricated via powder atomic layer deposition of SnO and subsequent sulfurization

Vinyl-addition copolymerization of norbornene and 1-octene catalyzed by a non-bridged half-titanocene with a tetrazole-phenoxy ligand

Atomic-layer-deposited SnO film using novel Sn(dmamb)2 precursor for p-channel thin film transistor

Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis(N-ethoxy-2,2-dimethyl propanamido)tin precursor

Polycrystalline and high purity SnO2 films by plasma-enhanced atomic layer deposition using H2O plasma at very low temperatures of 60–90 °C

Atomic layer deposition of pure In2O3 films for a temperature range of 200–300 °C using heteroleptic liquid In(DMAMP)2(OiPr) precursor

Palladium(II)-Catalyzed Synthesis of a Vinyl-Addition Ultrahigh-Molecular-Weight Polynorbornene Copolymer with an Entanglement Network for Enhanced Fracture Resistance

Plasma-Enhanced Atomic Layer Deposition of Ni

Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Nonplanar and Flexible Electronics

Atomic layer deposition of nickel oxide films using Ni ( dmamp ) 2 and water

Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Thin Films from a Zero-Valent (1,5-Hexadiene)(1-isopropyl-4-methylbenzene)ruthenium Complex and O2

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