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Design and Simulation of a 6-Bit Successive-Approximation ADC Using Modeled Organic Thin-Film Transistors

Active and Passive Electronic Components, 2016-01, Vol.2016 (2016), p.1-11

2016

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A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS

IEEE journal of solid-state circuits, 2005-07, Vol.40 (7), p.1434-1442

2005

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Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Active and Passive Electronic Components, 2014-01, Vol.2014 (2014), p.1-10

2014

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Stochastic Matching Properties of FinFETs

IEEE electron device letters, 2006-10, Vol.27 (10), p.846-848

2006

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Matching Performance of FinFET Devices With Fin Widths Down to 10 nm

IEEE electron device letters, 2009-12, Vol.30 (12), p.1374-1376

2009

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Determination and Validation of New Nonlinear FinFET Model Based on Lookup Tables

IEEE microwave and wireless components letters, 2007-05, Vol.17 (5), p.361-363

2007

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Holisitic device exploration for 7nm node

2015 IEEE Custom Integrated Circuits Conference (CICC), 2015, p.1-5

2015

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Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

Journal of the Electrochemical Society, 2004, Vol.151 (5), p.G307

2004

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Modeling of Current-Voltage Characteristics of the Photoactivated Device Based on SOI Technology

Active and Passive Electronic Components, 2012-01, Vol.2012 (2012), p.1-7

2012

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Light Sensor Platform Based on the Integration of Bacteriorhodopsin with a Single Electron Transistor

Active and Passive Electronic Components, 2011-01, Vol.2011 (2011), p.1-7

2011

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Vertical device architecture for 5nm and beyond: Device & circuit implications

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T26-T27

2015

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The Potential of FinFETs for Analog and RF Circuit Applications

IEEE transactions on circuits and systems. I, Regular papers, 2007-11, Vol.54 (11), p.2541-2551

2007

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Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack

IEEE electron device letters, 2007-04, Vol.28 (4), p.288-291

2007

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Multithreshold MOS Current Mode Logic Based Asynchronous Pipeline Circuits

ISRN electronics, 2012-01, Vol.2012 (2012), p.1-7

2012

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Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation

Physica. B, Condensed matter, 2007-12, Vol.401, p.469-472

2007

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Analysis of 2-MeV Electron-Irradiation Induced Degradation in FD-SOI MOSFETs Fabricated on ELTRAN and UNIBOND Wafers

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1939-1944

2006

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Design Issues and Considerations for Low-Cost 3-D TSV IC Technology

IEEE journal of solid-state circuits, 2011-01, Vol.46 (1), p.293-307

2011

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Low-Frequency Noise Performance of HfO[sub 2]-Based Gate Stacks

Journal of the Electrochemical Society, 2005, Vol.152 (9), p.F115

2005

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A Short Historical Survey of Functional Hardware Languages

ISRN electronics, 2012-01, Vol.2012 (2012), p.1-11

2012

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Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3795-3800

2004

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Hot hole induced damage in 1T-FBRAM on bulk FinFET

2011 International Reliability Physics Symposium, 2011, p.2D.3.1-2D.3.6

2011

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Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ \hbox Gate Stack

IEEE electron device letters, 2007-04, Vol.28 (4), p.288-291

2007

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Short-channel radiation effect in 60 MeV proton irradiated 0.13μm CMOS transistors

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.2426-2432

2003

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Investigation of back gate interface states by drain current hysteresis in PD-SOI n-MOSFETs

Physica. B, Condensed matter, 2006-04, Vol.376, p.416-419

2006

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Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2392-2397

2005

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Design and Simulation of a 6-Bit Successive-Approximation ADC Using Modeled Organic Thin-Film Transistors

A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS

Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Stochastic Matching Properties of FinFETs

Matching Performance of FinFET Devices With Fin Widths Down to 10 nm

Determination and Validation of New Nonlinear FinFET Model Based on Lookup Tables

Holisitic device exploration for 7nm node

Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

Modeling of Current-Voltage Characteristics of the Photoactivated Device Based on SOI Technology

Light Sensor Platform Based on the Integration of Bacteriorhodopsin with a Single Electron Transistor

Vertical device architecture for 5nm and beyond: Device & circuit implications

The Potential of FinFETs for Analog and RF Circuit Applications

Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack

Multithreshold MOS Current Mode Logic Based Asynchronous Pipeline Circuits

Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation

Analysis of 2-MeV Electron-Irradiation Induced Degradation in FD-SOI MOSFETs Fabricated on ELTRAN and UNIBOND Wafers

Design Issues and Considerations for Low-Cost 3-D TSV IC Technology

Low-Frequency Noise Performance of HfO[sub 2]-Based Gate Stacks

A Short Historical Survey of Functional Hardware Languages

Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

Hot hole induced damage in 1T-FBRAM on bulk FinFET

Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ \hbox Gate Stack

Short-channel radiation effect in 60 MeV proton irradiated 0.13μm CMOS transistors

Investigation of back gate interface states by drain current hysteresis in PD-SOI n-MOSFETs

Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs

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