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Synthesis and characterization of high-Tc superconducting oxides by the modified citrate gel process

Japanese journal of applied physics, 1989-12, Vol.28 (12), p.L2155-L2157

1989

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A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 3), p.1164-1167

2003

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Reversible Phase Transition of the Bi-Ca-Sr-Cu-O System between Semiconductivity and Superconductivity

Japanese Journal of Applied Physics, 1989-03, Vol.28 (3A), p.L395-L398

1989

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ESR Spectra and Low-Field Microwave Absorption in Bismuth and Thallium Based Cuprate Superconductors

Japanese Journal of Applied Physics, 1990-02, Vol.29 (2A), p.L258

1990

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Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure

Japanese Journal of Applied Physics, 2000, Vol.39 (2A), p.L82-L85

2000

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Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition

Japanese Journal of Applied Physics, 2000, Vol.39 (10R), p.5758-5762

2000

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Process and resistivity studies of the high-Tc superconductors in Tl-Ca-Ba-Cu-O

Japanese journal of applied physics, 1988-07, Vol.27 (7), p.L1206-L1208

1988

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Preparation of superconducting Bi-Pb-Sr-Ca-Cu-O compounds by oxalate coprecipitation

Japanese Journal of Applied Physics, 1991-06, Vol.30 (6), p.1198-1203

1991

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An efficient improvement for barrier effect of W-filled contact

Japanese Journal of Applied Physics, 1996-02, Vol.35 (2B), p.1115-1119

1996

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Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H 2 Plasma Treatment

Japanese Journal of Applied Physics, 1999-06, Vol.38 (6R), p.3482

1999

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Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics, 2003-01, Vol.42 (Part 1, No. 1), p.28-32

2003

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Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface

Japanese Journal of Applied Physics, 1999-11, Vol.38 (11R), p.6247

1999

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Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-k Hydrogen Silisesquioxane

Japanese Journal of Applied Physics, 2001-05, Vol.40 (5R), p.3143

2001

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Comparison of N 2 and NH 3 Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors

Japanese Journal of Applied Physics, 1998-07, Vol.37 (7R), p.3900

1998

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Dimensional Effects on the Drain Current of N- and P-Channel Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics, 2000-07, Vol.39 (7R), p.3879

2000

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Nucleation and Growth of Ge at Pb/Si(111) Surfaces: Reaction-Limited Aggregation

Japanese Journal of Applied Physics, 2000-07, Vol.39 (7R), p.4100

2000

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Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

Japanese Journal of Applied Physics, 1994, Vol.33 (1A), p.240-246

1994

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Characterization of Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique

Japanese Journal of Applied Physics, 1994, Vol.33 (4A), p.1787-1792

1994

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ESR spectra and low-field microwave absorptionh in bismuth and thallium based cuprate superconductors

Japanese journal of applied physics, 1990, Vol.29 (2), p.L258-L261

1990

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Synthesis and Characterization of High-T c Superconducting Oxides by the Modified Citrate Gel Process

Japanese Journal of Applied Physics, 1989-12, Vol.28 (12A), p.L2155

1989

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Process and Resistivity Studies of the High-T c Superconductors in Tl-Ca-Ba-Cu-O

Japanese Journal of Applied Physics, 1988-07, Vol.27 (7A), p.L1206

1988

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Superconductivity at 63 K in YSr2.2Cu2.6Fe0.25Oy

Japanese journal of applied physics, 1995, Vol.34 (9A), p.4749-4753

1995

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A precision alignment with moire technique and differential amplifier

Japanese Journal of Applied Physics, 1992-06, Vol.31 (6A), p.1940-1941

1992

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Correlation Field Analysis of Magnetoresistance of GaN/AlGaN Heterostructure Grown on Si Substrate

Japanese Journal of Applied Physics, 2008-06, Vol.47 (6R), p.4623

2008

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HIGHLY SELECTIVE GaAs/Al0.2Ga0.8As WET ETCH PROCESS FOR THE GATE RECESS OF LOW-VOLTAGE-POWER PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 8, pp. 4699-4703. 2000, 2000, Vol.39 (8), p.4699-4703

2000

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Synthesis and characterization of high-Tc superconducting oxides by the modified citrate gel process

A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

Reversible Phase Transition of the Bi-Ca-Sr-Cu-O System between Semiconductivity and Superconductivity

ESR Spectra and Low-Field Microwave Absorption in Bismuth and Thallium Based Cuprate Superconductors

Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure

Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition

Process and resistivity studies of the high-Tc superconductors in Tl-Ca-Ba-Cu-O

Preparation of superconducting Bi-Pb-Sr-Ca-Cu-O compounds by oxalate coprecipitation

An efficient improvement for barrier effect of W-filled contact

Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H 2 Plasma Treatment

Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors

Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface

Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-k Hydrogen Silisesquioxane

Comparison of N 2 and NH 3 Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors

Dimensional Effects on the Drain Current of N- and P-Channel Polycrystalline Silicon Thin Film Transistors

Nucleation and Growth of Ge at Pb/Si(111) Surfaces: Reaction-Limited Aggregation

Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

Characterization of Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique

ESR spectra and low-field microwave absorptionh in bismuth and thallium based cuprate superconductors

Synthesis and Characterization of High-T c Superconducting Oxides by the Modified Citrate Gel Process

Process and Resistivity Studies of the High-T c Superconductors in Tl-Ca-Ba-Cu-O

Superconductivity at 63 K in YSr2.2Cu2.6Fe0.25Oy

A precision alignment with moire technique and differential amplifier

Correlation Field Analysis of Magnetoresistance of GaN/AlGaN Heterostructure Grown on Si Substrate

HIGHLY SELECTIVE GaAs/Al0.2Ga0.8As WET ETCH PROCESS FOR THE GATE RECESS OF LOW-VOLTAGE-POWER PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR

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