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The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Applied physics letters, 2010-07, Vol.97 (4)

2010

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Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices

Applied physics letters, 2007-05, Vol.90 (21)

2007

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Low-power memory device with NiSi2 nanocrystals embedded in silicon dioxide layer

Applied physics letters, 2005-11, Vol.87 (19)

2005

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A distributed charge storage with GeO2 nanodots

Applied physics letters, 2004-04, Vol.84 (14), p.2581-2583

2004

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Creation of nanostructures on gold surfaces in nonconducting liquid

Applied physics letters, 1995-08, Vol.67 (7), p.903-905

1995

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Quasisuperlattice storage: A concept of multilevel charge storage

Applied physics letters, 2004-07, Vol.85 (2), p.248-250

2004

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Publisher’s Note: “Memory effect of oxide/SiC:O/oxide sandwiched structures” [Appl. Phys. Lett. 84 , 2094 (2004)]

Applied physics letters, 2004-06, Vol.84 (23), p.4815-4815

2004

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Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Applied physics letters, 2005-05, Vol.86 (18)

2005

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Synthesis under ambient pressure of 80 K superconducting YBa2Cu4O8 powders via coprecipitation

Applied physics letters, 1991-05, Vol.58 (21), p.2426-2428

1991

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Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition

Applied physics letters, 1995-08, Vol.67 (8), p.1092-1094

1995

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Memory effect of oxide/SiC:O/oxide sandwiched structures

Applied physics letters, 2004-03, Vol.84 (12), p.2094-2096

2004

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Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications

Applied physics letters, 2003-11, Vol.83 (20), p.4226-4228

2003

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Superhigh strength and good soft-magnetic properties of (Fe,Co)–B–Si–Nb bulk glassy alloys with high glass-forming ability

Applied physics letters, 2004-11, Vol.85 (21), p.4911-4913

2004

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Leakage behavior of the quasi-superlattice stack for multilevel charge storage

Applied physics letters, 2004-05, Vol.84 (18), p.3687-3689

2004

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Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

Applied physics letters, 2007-03, Vol.90 (13)

2007

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Chirality- and size-dependent elastic properties of single-walled carbon nanotubes

Applied physics letters, 2005-12, Vol.87 (25), p.251929-251929-3

2005

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Tungsten nanocrystal memory devices improved by supercritical fluid treatment

Applied physics letters, 2007-12, Vol.91 (23), p.232104-232104-3

2007

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Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application

Applied physics letters, 2007-05, Vol.90 (22)

2007

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Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Applied physics letters, 2007-08, Vol.91 (8), p.082103-082103-3

2007

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Co-Fe-B-Si-Nb bulk glassy alloys with superhigh strength and extremely low magnetostriction

Applied physics letters, 2006-01, Vol.88 (1), p.011901-011901-3

2006

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Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices

Applied physics letters, 2008-01, Vol.92 (1), p.013114-013114-3

2008

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Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

Applied physics letters, 2008-02, Vol.92 (6), p.062112-062112-3

2008

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Improved reliability of Mo nanocrystal memory with ammonia plasma treatment

Applied physics letters, 2009-02, Vol.94 (6), p.62106

2009

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The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al 2 O 3 / n-In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitor

Applied physics letters, 2010-07, Vol.97 (4), p.042903-042903-3

2010

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Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

Applied physics letters, 2007-05, Vol.90 (19), p.192114-192114-3

2007

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The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices

Low-power memory device with NiSi2 nanocrystals embedded in silicon dioxide layer

A distributed charge storage with GeO2 nanodots

Creation of nanostructures on gold surfaces in nonconducting liquid

Quasisuperlattice storage: A concept of multilevel charge storage

Publisher’s Note: “Memory effect of oxide/SiC:O/oxide sandwiched structures” [Appl. Phys. Lett. 84 , 2094 (2004)]

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Synthesis under ambient pressure of 80 K superconducting YBa2Cu4O8 powders via coprecipitation

Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition

Memory effect of oxide/SiC:O/oxide sandwiched structures

Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications

Superhigh strength and good soft-magnetic properties of (Fe,Co)–B–Si–Nb bulk glassy alloys with high glass-forming ability

Leakage behavior of the quasi-superlattice stack for multilevel charge storage

Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

Chirality- and size-dependent elastic properties of single-walled carbon nanotubes

Tungsten nanocrystal memory devices improved by supercritical fluid treatment

Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application

Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Co-Fe-B-Si-Nb bulk glassy alloys with superhigh strength and extremely low magnetostriction

Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices

Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

Improved reliability of Mo nanocrystal memory with ammonia plasma treatment

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al 2 O 3 / n-In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitor

Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

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