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Measurement of Minority Carrier Lifetime in n-Type MBE HgCdTe on Variable Substrates

Journal of electronic materials, 2012-10, Vol.41 (10), p.2785-2789

2012

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Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface

Applied physics letters, 1994-05, Vol.64 (20), p.2688-2690

1994

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An X-ray standing wave study of ultrathin InAs films in GaAs(0 0 1) grown by atomic layer epitaxy

Journal of crystal growth, 1998-12, Vol.195 (1), p.34-40

1998

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Strain and relaxation in InAs and InGaAs films grown on GaAs(001)

Applied physics letters, 1996-05, Vol.68 (21), p.3010-3012

1996

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Bond-Length Distortions in Strained Semiconductor Alloys

Physical review letters, 1997-12, Vol.79 (25), p.5026-5029

1997

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Relief of compressive biaxial strains in thin films via microtwins

Journal of applied physics, 1990-04, Vol.67 (8), p.3706-3710

1990

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Characterization of vertical-cavity semiconductor structures

Journal of applied physics, 1992-12, Vol.72 (12), p.5982-5989

1992

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Scaling of the nonlinear optical cross sections of GaAs-AlGaAs multiple quantum-well hetero n-i-p-i's

IEEE journal of quantum electronics, 1994-12, Vol.30 (12), p.2790-2797

1994

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Interface roughness of short-period AlAs/GaAs superlattices studied by spectroscopic ellipsometry

Journal of applied physics, 1993-06, Vol.73 (11), p.7739-7746

1993

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X-ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices

Applied physics letters, 1996-08, Vol.69 (8), p.1134-1136

1996

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Quantum conductance fluctuations in the large-size-scale regime

Physical review. B, Condensed matter, 1996-05, Vol.53 (19), p.13086-13090

1996

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Real-Time Pseudodielectric Function of Low-Temperature-Grown GaAs

MRS proceedings, 2000, Vol.618, Article 243

2000

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Study of phonons in semiconductor superlattices by Raman scattering spectroscopy and microscopic model calculation

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-02, Vol.44 (1), p.143-146

1997

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The use of X-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructures

Physica. B, Condensed matter, 1996-04, Vol.221 (1), p.437-444

1996

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Accommodation of strain in ultrathin InAs/GaAs films

Physical review. B, Condensed matter, 1995-07, Vol.52 (4), p.R2281-R2284

1995

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Molecular beam epitaxy versus chemical vapor deposition of silicon on sapphire

Applied physics letters, 1990-06, Vol.56 (25), p.2551-2553

1990

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High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in AlxGa1−xAs films

Journal of applied physics, 2003-04, Vol.93 (7), p.3747-3759

2003

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Elimination of microtwins in silicon grown on sapphire by molecular beam epitaxy

Applied physics letters, 1989-05, Vol.54 (18), p.1766-1768

1989

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Photoreflectance and X-ray studies of silicon films on sapphire

Materials letters, 1989-04, Vol.8 (1), p.64-68

1989

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Diffuse reflectance spectroscopy for in situ process monitoring and control during molecular beam epitaxy growth of InGaAs/AlGaAs pseudomorphic high electron mobility transistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-09, Vol.18 (5), p.2518-2522

2000

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Real-time measurements of the pseudodielectric function of low-temperature-grown GaAs

Applied physics letters, 2000-07, Vol.77 (4), p.540-542

2000

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Unique properties of molecular beam epitaxy silicon on sapphire using in situ high-temperature substrate annealing compared with chemically vapor deposited silicon on sapphire

Thin solid films, 1990-11, Vol.192 (2), p.287-294

1990

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The use of x-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructure

Physica. B, Condensed matter, 1996-04, Vol.221 (1-4 ; Apr. 1996)

1996

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Determination of the complex refractive index of individual quantum wells from distributed reflectance

Journal of applied physics, 1994-03, Vol.75 (6), p.3056-3059

1994

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Elimination of Microtwins in Mbe-Grown Silicon on Sapphire

MRS proceedings, 1988, Vol.138, Article 409

1988

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Measurement of Minority Carrier Lifetime in n-Type MBE HgCdTe on Variable Substrates

Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface

An X-ray standing wave study of ultrathin InAs films in GaAs(0 0 1) grown by atomic layer epitaxy

Strain and relaxation in InAs and InGaAs films grown on GaAs(001)

Bond-Length Distortions in Strained Semiconductor Alloys

Relief of compressive biaxial strains in thin films via microtwins

Characterization of vertical-cavity semiconductor structures

Scaling of the nonlinear optical cross sections of GaAs-AlGaAs multiple quantum-well hetero n-i-p-i's

Interface roughness of short-period AlAs/GaAs superlattices studied by spectroscopic ellipsometry

X-ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices

Quantum conductance fluctuations in the large-size-scale regime

Real-Time Pseudodielectric Function of Low-Temperature-Grown GaAs

Study of phonons in semiconductor superlattices by Raman scattering spectroscopy and microscopic model calculation

The use of X-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructures

Accommodation of strain in ultrathin InAs/GaAs films

Molecular beam epitaxy versus chemical vapor deposition of silicon on sapphire

High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in AlxGa1−xAs films

Elimination of microtwins in silicon grown on sapphire by molecular beam epitaxy

Photoreflectance and X-ray studies of silicon films on sapphire

Diffuse reflectance spectroscopy for in situ process monitoring and control during molecular beam epitaxy growth of InGaAs/AlGaAs pseudomorphic high electron mobility transistors

Real-time measurements of the pseudodielectric function of low-temperature-grown GaAs

Unique properties of molecular beam epitaxy silicon on sapphire using in situ high-temperature substrate annealing compared with chemically vapor deposited silicon on sapphire

The use of x-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructure

Determination of the complex refractive index of individual quantum wells from distributed reflectance

Elimination of Microtwins in Mbe-Grown Silicon on Sapphire

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