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Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

IEEE transactions on power electronics, 2008-03, Vol.23 (2), p.692-697

2008

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10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

IEEE electron device letters, 2021-06, Vol.42 (6), p.808-811

2021

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Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ

2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS), 2024, p.1079-1082

2024

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Comparison of GaN HEMTs on Diamond and SiC Substrates

IEEE electron device letters, 2007-11, Vol.28 (11), p.948-950

2007

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AlGaN/GaN HEMTs on SiC with fT of over 120 GHz

IEEE electron device letters, 2002-08, Vol.23 (8), p.455-457

2002

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10-W/mm AlGaN-GaN HFET with a field modulating plate

IEEE electron device letters, 2003-05, Vol.24 (5), p.289-291

2003

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Non-contact electrical characterization of GaN, SiC and AlGaN/GaN for device applications

2016 China Semiconductor Technology International Conference (CSTIC), 2016, p.1-3

2016

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Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate

IEEE electron device letters, 2016-11, Vol.37 (11), p.1407-1410

2016

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Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

IEEE electron device letters, 2003-06, Vol.24 (6), p.375-377

2003

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Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE

IEEE electron device letters, 2004-05, Vol.25 (5), p.247-249

2004

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HyFET-A GaN/SiC Hybrid Field-Effect Transistor

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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AlGaN-GaN HEMTs on SiC with CW power performance of >4 W/mm and 23% PAE at 35 GHz

IEEE electron device letters, 2003-10, Vol.24 (10), p.616-618

2003

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Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With \hbox\hbox Passivation

IEEE electron device letters, 2009-09, Vol.30 (9), p.904-906

2009

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High-Performance 0.1- \mu\hbox Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

IEEE electron device letters, 2009-02, Vol.30 (2), p.107-109

2009

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0.25 \mu\hbox Self-Aligned AlGaN/GaN High Electron Mobility Transistors

IEEE electron device letters, 2008-01, Vol.29 (1), p.18-20

2008

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Large-signal performance of deep submicrometer AlGaN/AlN/GaNHEMTs with a field-modulating plate

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1689-1692

2005

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Current status of high-power GaN HEMTs and future prospects on AlN-based devices

2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK), 2021, p.1-3

2021

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High power, high conversion gain frequency doublers using SiC MESFETs and AlGaN/GaN HEMTs

2010 IEEE MTT-S International Microwave Symposium, 2010, p.1-1

2010

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Membrane Supported GaN CPW Structures for High-frequency and High-power Applications

2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019, p.1179-1181

2019

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AlGaN/GaN HEMTs on Diamond Substrate

2007 65th Annual Device Research Conference, 2007, p.31-32

2007

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High Breakdown Voltage and Low Specific On-resistance C-doped GaN-on-sapphire HFETs for Low-loss and High-power Switching Applications

APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition, 2007, p.1264-1267

2007

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AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20GHz

Electronics letters, 2000-07, Vol.36 (14), p.1-1

2000

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High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

Electronics letters, 2000-03, Vol.36 (5), p.1-1

2000

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Characteristics of microwave power GaN HEMTs on 4-inch Si wafers

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.1, p.449-452 vol.1

2002

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High power, high conversion gain frequency doublers using SiC MESFETs and AlGaN/GaN HEMTs

2010 IEEE MTT-S International Microwave Symposium, 2010, p.1008-1011

2010

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Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ

Comparison of GaN HEMTs on Diamond and SiC Substrates

AlGaN/GaN HEMTs on SiC with fT of over 120 GHz

10-W/mm AlGaN-GaN HFET with a field modulating plate

Non-contact electrical characterization of GaN, SiC and AlGaN/GaN for device applications

Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate

Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE

HyFET-A GaN/SiC Hybrid Field-Effect Transistor

AlGaN-GaN HEMTs on SiC with CW power performance of >4 W/mm and 23% PAE at 35 GHz

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With \hbox\hbox Passivation

High-Performance 0.1- \mu\hbox Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

0.25 \mu\hbox Self-Aligned AlGaN/GaN High Electron Mobility Transistors

Large-signal performance of deep submicrometer AlGaN/AlN/GaNHEMTs with a field-modulating plate

Current status of high-power GaN HEMTs and future prospects on AlN-based devices

High power, high conversion gain frequency doublers using SiC MESFETs and AlGaN/GaN HEMTs

Membrane Supported GaN CPW Structures for High-frequency and High-power Applications

AlGaN/GaN HEMTs on Diamond Substrate

High Breakdown Voltage and Low Specific On-resistance C-doped GaN-on-sapphire HFETs for Low-loss and High-power Switching Applications

AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20GHz

High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

Characteristics of microwave power GaN HEMTs on 4-inch Si wafers

High power, high conversion gain frequency doublers using SiC MESFETs and AlGaN/GaN HEMTs

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