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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1805-1811

2024

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Efficacy of \Pi -Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-4

2023

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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

IEEE electron device letters, 2015-10, Vol.36 (10), p.1011-1014

2015

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Impact of structural modification by spacer layer inclusion on AlGaN/GaN HEMT performance

2021 International Conference on Information and Communication Technology for Sustainable Development (ICICT4SD), 2021, p.76-81

2021

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On the modelling of interface roughness scattering in AlGaN/GaN heterostructures

2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), 2020, p.22-27

2020

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RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high "Figure of Merit"

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS), 2014, p.1-4

2014

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Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe Heterostucture

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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Comparative Study of AlGaN/GaN-Based Polarization Junction Super HFET

2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS), 2023, p.1-6

2023

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Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing

2023 8th International Conference on Integrated Circuits and Microsystems (ICICM), 2023, p.427-431

2023

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Comparison of Drain Current Transient Characteristics of AlGaN/GaN HEMTs in the Linear and Saturation Regions after OFF-state Stress

2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2023, p.1-4

2023

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RF Performance of InAlN/GaN HFETs and MOSHFETs With f \times L up to 21 \hbox\cdot \mu\hbox

IEEE electron device letters, 2010-03, Vol.31 (3), p.180-182

2010

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Dynamic current-voltage characteristics of III-N HFETs

IEEE electron device letters, 2003-11, Vol.24 (11), p.680-682

2003

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Effects of \hbox Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT

IEEE electron device letters, 2008-03, Vol.29 (3), p.209-211

2008

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150 W GaN-on-Si RF Power Transistor

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.483-486

2005

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The Development of a High Power SP4T RF Switch in GaN HFET Technology

IEEE microwave and wireless components letters, 2007-12, Vol.17 (12), p.894-896

2007

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Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers

2022 Compound Semiconductor Week (CSW), 2022, p.1-2

2022

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Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates

IEEE electron device letters, 2003-02, Vol.24 (2), p.57-59

2003

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Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

IEEE electron device letters, 2004-05, Vol.25 (5), p.238-240

2004

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High power GaN-HEMT microwave switches for X-Band and wideband applications

2008 IEEE Radio Frequency Integrated Circuits Symposium, 2008, p.329-332

2008

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An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction

IEEE microwave and wireless components letters, 2006-06, Vol.16 (6), p.333-335

2006

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Membrane Supported GaN CPW Structures for High-frequency and High-power Applications

2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019, p.1179-1181

2019

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Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.431-434

2009

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Submicron enhancement-mode AlGaN/GaN HEMTs

60th DRC. Conference Digest Device Research Conference, 2002, p.23-24

2002

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Observation of acoustoelectric effect in micromachined lamb wave delay lines with AlGaN/GaN heterostructure

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.26.6.1-26.6.4

2016

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Buffer trapping effects on knee walkout in GaN HEMTs

2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 2017, p.1-4

2017

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Efficacy of \Pi -Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

Impact of structural modification by spacer layer inclusion on AlGaN/GaN HEMT performance

On the modelling of interface roughness scattering in AlGaN/GaN heterostructures

RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high "Figure of Merit"

Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe Heterostucture

Comparative Study of AlGaN/GaN-Based Polarization Junction Super HFET

Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing

Comparison of Drain Current Transient Characteristics of AlGaN/GaN HEMTs in the Linear and Saturation Regions after OFF-state Stress

RF Performance of InAlN/GaN HFETs and MOSHFETs With f \times L up to 21 \hbox\cdot \mu\hbox

Dynamic current-voltage characteristics of III-N HFETs

Effects of \hbox Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT

150 W GaN-on-Si RF Power Transistor

The Development of a High Power SP4T RF Switch in GaN HFET Technology

Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers

Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates

Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

High power GaN-HEMT microwave switches for X-Band and wideband applications

An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction

Membrane Supported GaN CPW Structures for High-frequency and High-power Applications

Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics

Submicron enhancement-mode AlGaN/GaN HEMTs

Observation of acoustoelectric effect in micromachined lamb wave delay lines with AlGaN/GaN heterostructure

Buffer trapping effects on knee walkout in GaN HEMTs

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