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Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.631-636

2022

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Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3848-3854

2018

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Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

IEEE electron device letters, 2022-04, Vol.43 (4), p.529-532

2022

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Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5720-5727

2021

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Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors Via In-situ SiNx

IEEE electron device letters, 2024-09, p.1-1

2024

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Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors With Al2O3 Surface Passivation and Sensing Membrane

IEEE sensors journal, 2016-05, Vol.16 (10), p.3514-3522

2016

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High- f} High Johnson's Figure-of-Merit 0.2- \mu Gate AlGaN/GaN HEMTs on Silicon Substrate With /} Passivation

IEEE electron device letters, 2014-03, Vol.35 (3), p.315-317

2014

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AlGaN/GaN MIS-HFETs with fT of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers

IEEE electron device letters, 2006-01, Vol.27 (1), p.16-18

2006

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Performance of the AlGaN HEMT structure with a gate extension

IEEE transactions on electron devices, 2004-02, Vol.51 (2), p.292-295

2004

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Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates

2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, p.22-25

2018

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Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

IEEE electron device letters, 2006-04, Vol.27 (4), p.214-216

2006

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Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers

IEEE electron device letters, 2005-03, Vol.26 (3), p.139-141

2005

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600V 1.3mμ·cm2 low-leakage low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx passivation

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.191-194

2013

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an \hbox\hbox/\hbox Dielectric Layer

IEEE electron device letters, 2009-09, Vol.30 (9), p.913-915

2009

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Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With \hbox\hbox Passivation

IEEE electron device letters, 2009-09, Vol.30 (9), p.904-906

2009

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Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation

2012 IEEE/MTT-S International Microwave Symposium Digest, 2012, p.1-3

2012

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Effects of \hbox Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT

IEEE electron device letters, 2008-03, Vol.29 (3), p.209-211

2008

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Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

IEEE electron device letters, 2004-05, Vol.25 (5), p.238-240

2004

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AlGaN/GaN MOS-HEMT With \hbox Dielectric and \hbox\hbox Interfacial Passivation Layer Grown by Atomic Layer Deposition

IEEE electron device letters, 2008-08, Vol.29 (8), p.838-840

2008

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Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

IEEE electron device letters, 2006-01, Vol.27 (1), p.1-3

2006

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Pulsed-IV and drain current transient study of AlGaN/GaN HEMTs

2020 5th IEEE International Conference on Emerging Electronics (ICEE), 2020, p.1-4

2020

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Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

IEEE electron device letters, 2005-04, Vol.26 (4), p.225-227

2005

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Surface Passivation of AlGaN/GaN HEMTs

2008 Device Research Conference, 2008, p.131-132

2008

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Silicon Dioxide Passivation of AlGaN/GaN HEMTs for High Breakdown Voltage

2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 2006, p.1-4

2006

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AlGaN/GaN MOS-HEMT with Stack Gate HfO2/Al2O3 Structure Grown by Atomic Layer Deposition

2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008, p.1-4

2008

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Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors Via In-situ SiNx

Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors With Al2O3 Surface Passivation and Sensing Membrane

High- f} High Johnson's Figure-of-Merit 0.2- \mu Gate AlGaN/GaN HEMTs on Silicon Substrate With /} Passivation

AlGaN/GaN MIS-HFETs with fT of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers

Performance of the AlGaN HEMT structure with a gate extension

Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates

Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers

600V 1.3mμ·cm2 low-leakage low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx passivation

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an \hbox\hbox/\hbox Dielectric Layer

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With \hbox\hbox Passivation

Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation

Effects of \hbox Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT

Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

AlGaN/GaN MOS-HEMT With \hbox Dielectric and \hbox\hbox Interfacial Passivation Layer Grown by Atomic Layer Deposition

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

Pulsed-IV and drain current transient study of AlGaN/GaN HEMTs

Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

Surface Passivation of AlGaN/GaN HEMTs

Silicon Dioxide Passivation of AlGaN/GaN HEMTs for High Breakdown Voltage

AlGaN/GaN MOS-HEMT with Stack Gate HfO2/Al2O3 Structure Grown by Atomic Layer Deposition

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