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Radiation Effects in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1-1

2022

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1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

IEEE electron device letters, 2024-06, Vol.45 (6), p.1048-1051

2024

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GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078

2022

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The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1120-1126

2022

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

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Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806

2018

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Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.931-935

2019

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Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.716-716

2020

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Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2106-2112

2008

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Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

IEEE transactions on power electronics, 2008-03, Vol.23 (2), p.692-697

2008

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Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184), 2020, p.137-142

2020

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Theoretical Study of Electron Confinement in Submicrometer GaN HFETs Using a Thermally Self-Consistent Monte Carlo Method

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.945-953

2008

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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

Proceedings of the 2015 International Conference on Microelectronic Test Structures, 2015, p.163-168

2015

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Simulation of E-Mode p-Channel GaN/AlGaN HFETs with Hybrid AlGaN Barrier Layer

2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC), 2023, p.1-3

2023

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10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

IEEE electron device letters, 2021-06, Vol.42 (6), p.808-811

2021

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Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3861-3868

2022

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Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

IEEE transactions on electron devices, 2024-09, p.1-8

2024

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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

IEEE electron device letters, 2015-10, Vol.36 (10), p.1011-1014

2015

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Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2023-01, p.1-1

2023

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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022, p.1-8

2022

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Investigation on Premature Breakdown Mechanisms in AlGaN/GaN HEMTs by TCAD simulations

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020, p.1-3

2020

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Impact of structural modification by spacer layer inclusion on AlGaN/GaN HEMT performance

2021 International Conference on Information and Communication Technology for Sustainable Development (ICICT4SD), 2021, p.76-81

2021

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Radiation Effects in AlGaN/GaN HEMTs

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

Theoretical Study of Electron Confinement in Submicrometer GaN HFETs Using a Thermally Self-Consistent Monte Carlo Method

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

An AlN/Al0.85Ga0.15N high electron mobility transistor

Simulation of E-Mode p-Channel GaN/AlGaN HFETs with Hybrid AlGaN Barrier Layer

10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures

Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

Investigation on Premature Breakdown Mechanisms in AlGaN/GaN HEMTs by TCAD simulations

Impact of structural modification by spacer layer inclusion on AlGaN/GaN HEMT performance

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