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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2544-2550

2019

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Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806

2018

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Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.876-882

2019

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Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3848-3854

2018

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Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.931-935

2019

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Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors

IEEE electron device letters, 2018-08, Vol.39 (8), p.1145-1148

2018

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Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.716-716

2020

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

IEEE transactions on electron devices, 2024-10, p.1-7

2024

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Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs

IEEE electron device letters, 2024-10, Vol.45 (10), p.1721-1723

2024

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Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6033-6038

2021

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Demonstration of Effective Intrinsic Electron Velocity > 10 ^} cm/s in Ultrawide Bandgap Al } Ga } N Channel HEMTs

IEEE transactions on electron devices, 2024-10, p.1-5

2024

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Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

IEEE transactions on electron devices, 2024-09, p.1-8

2024

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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

IEEE electron device letters, 2015-10, Vol.36 (10), p.1011-1014

2015

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Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2023-01, p.1-1

2023

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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022, p.1-8

2022

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Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5720-5727

2021

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Enhancement-mode AlGaN/GaN MIS-HEMTs with high VTH and high IDmax using recessedstructure with regrown AlGaN barrier

IEEE electron device letters, 2020-04, p.1-1

2020

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Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes

2024 Device Research Conference (DRC), 2024, p.1-2

2024

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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1554-1561

2004

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Total ionizing dose and annealing effects on VTH shift for p-GaN Gate AlGaN/GaN HEMTs

IEEE electron device letters, 2022-11, p.1-1

2022

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Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH } Plasma Pretreatment

IEEE transactions on electron devices, 2023-07, p.1-5

2023

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Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors Via In-situ SiNx

IEEE electron device letters, 2024-09, p.1-1

2024

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12 W/mm AlGaN-GaN HFETs on silicon substrates

IEEE electron device letters, 2004-07, Vol.25 (7), p.459-461

2004

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors

Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

An AlN/Al0.85Ga0.15N high electron mobility transistor

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs

Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs

Demonstration of Effective Intrinsic Electron Velocity > 10 ^} cm/s in Ultrawide Bandgap Al } Ga } N Channel HEMTs

Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic \textit}}}} in AlGaN/GaN HEMTs

Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

Enhancement-mode AlGaN/GaN MIS-HEMTs with high VTH and high IDmax using recessedstructure with regrown AlGaN barrier

Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

Total ionizing dose and annealing effects on VTH shift for p-GaN Gate AlGaN/GaN HEMTs

Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH } Plasma Pretreatment

Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors Via In-situ SiNx

12 W/mm AlGaN-GaN HFETs on silicon substrates

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