UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

Volltextzugriff (PDF)

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1805-1811

2024

Volltextzugriff (PDF)

10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

IEEE electron device letters, 2021-06, Vol.42 (6), p.808-811

2021

Volltextzugriff (PDF)

Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3861-3868

2022

Volltextzugriff (PDF)

Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

IEEE electron device letters, 2022-04, Vol.43 (4), p.529-532

2022

Volltextzugriff (PDF)

Efficacy of \Pi -Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-4

2023

Volltextzugriff (PDF)

10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.374-377

2023

Volltextzugriff (PDF)

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1554-1561

2004

Volltextzugriff (PDF)

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates

2022 Device Research Conference (DRC), 2022, p.1-2

2022

Volltextzugriff (PDF)

Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer

2022 Device Research Conference (DRC), 2022, p.1-2

2022

Volltextzugriff (PDF)

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs

2021 IEEE 14th International Conference on ASIC (ASICON), 2021, p.1-4

2021

Volltextzugriff (PDF)

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type -GaN Gate HEMTs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3453-3458

2019

Volltextzugriff (PDF)

Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO } as Gate Dielectric

IEEE electron device letters, 2019-02, Vol.40 (2), p.295-298

2019

Volltextzugriff (PDF)

Theoretical Study of Double-Heterojunction AlGaN/GaN/InGaN/δ-doped HEMTs for Improved Transconductance Linearity

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.245-248

Yu, Tsung-Hsing

2020

Volltextzugriff (PDF)

Performance of the AlGaN HEMT structure with a gate extension

IEEE transactions on electron devices, 2004-02, Vol.51 (2), p.292-295

2004

Volltextzugriff (PDF)

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

Volltextzugriff (PDF)

Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe Heterostucture

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

Volltextzugriff (PDF)

Gate Engineered AlGaN/GaN HEMT to Reduce the Trapping Effects and Improve Reliability

2024 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET), 2024, p.1-5

2024

Volltextzugriff (PDF)

HyFET-A GaN/SiC Hybrid Field-Effect Transistor

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

Volltextzugriff (PDF)

Comparative Study of AlGaN/GaN-Based Polarization Junction Super HFET

2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS), 2023, p.1-6

2023

Volltextzugriff (PDF)

Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing

2023 8th International Conference on Integrated Circuits and Microsystems (ICICM), 2023, p.427-431

2023

Volltextzugriff (PDF)

Transparent ITO gate p-GaN/AlGaN/GaN UV photodetector with high responsivity and high PDCR

2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2023, p.1-4

2023

Volltextzugriff (PDF)

Comparison of Drain Current Transient Characteristics of AlGaN/GaN HEMTs in the Linear and Saturation Regions after OFF-state Stress

2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2023, p.1-4

2023

Volltextzugriff (PDF)

Ultrathin Barrier Layer AlN/GaN HEMTs Grown by Molecular Beam Epitaxy

2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC), 2023, p.1-3

2023

Volltextzugriff (PDF)

Planar mmWave Traveling Wave Amplifier on GaN/AlGaN Heterostructure

2023 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (USNC-URSI), 2023, p.1247-1248

2023

Volltextzugriff (PDF)

1 – 25 von 92

Suche als RSS-Feed

Aktive Filter

KollektionIngentaConnect Journals

ThemaAluminum Gallium Nitride

ThemaEngineering

ThemaModfets

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(27)
Mit Volltextzugriff
(41)

Publikationsform

Tagungsberichte
(65)
Artikel
(27)

Sprache

Englisch
(92)

Erscheinungsjahr

n.n

Thema

14 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

An AlN/Al0.85Ga0.15N high electron mobility transistor

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures

Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

Efficacy of \Pi -Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates

Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type -GaN Gate HEMTs

Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO } as Gate Dielectric

Theoretical Study of Double-Heterojunction AlGaN/GaN/InGaN/δ-doped HEMTs for Improved Transconductance Linearity

Performance of the AlGaN HEMT structure with a gate extension

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe Heterostucture

Gate Engineered AlGaN/GaN HEMT to Reduce the Trapping Effects and Improve Reliability

HyFET-A GaN/SiC Hybrid Field-Effect Transistor

Comparative Study of AlGaN/GaN-Based Polarization Junction Super HFET

Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing

Transparent ITO gate p-GaN/AlGaN/GaN UV photodetector with high responsivity and high PDCR

Comparison of Drain Current Transient Characteristics of AlGaN/GaN HEMTs in the Linear and Saturation Regions after OFF-state Stress

Ultrathin Barrier Layer AlN/GaN HEMTs Grown by Molecular Beam Epitaxy

Planar mmWave Traveling Wave Amplifier on GaN/AlGaN Heterostructure

Aktive Filter

Suchergebnisse filtern