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Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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GaN and InGaN Based Nanocomposites for Ammonia Gas Sensing Applications

Physica status solidi. B, Basic research, 2022-02, Vol.259 (2), p.n/a

2022

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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Influence of Mg Out‐Diffusion Effect on the Threshold Voltage of GaN‐Based p‐Channel Heterostructure Field‐Effect Transistors

physica status solidi (b), 2023-05, Vol.260 (5), p.n/a

2023

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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates

physica status solidi (b), 2023-09, Vol.260 (9)

2023

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Watt‐Class Green (530 nm) and Blue (465 nm) Laser Diodes

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges

Physica status solidi. A, Applications and materials science, 2022-04, Vol.219 (7), p.n/a

2022

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Temperature‐Dependent Charge Carrier Diffusion in [ 0001¯ ] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

physica status solidi (b), 2020-06, Vol.257 (6), p.n/a

2020

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Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy

physica status solidi (b), 2023-07, Vol.260 (7), p.n/a

2023

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Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells

physica status solidi (b), 2022-06, Vol.259 (6), p.n/a

2022

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A Modeling Study of Electron Transport in GaN/AlGaN Superlattices Using Monte Carlo Simulation

physica status solidi (b), 2024-02, Vol.261 (2), p.n/a

2024

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Effective Schottky Barrier Height Model for N‐Polar and Ga‐Polar GaN by Polarization‐Induced Surface Charges with Finite Thickness

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Pyramid Formation by Etching of InxGa1−xN/GaN Quantum Well Structures Grown on N‐face GaN for Nanooptical Light Emitters

physica status solidi (b), 2021-10, Vol.258 (10)

2021

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Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks

physica status solidi (b), 2023-08, Vol.260 (8), p.n/a

2023

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Temperature Dependence of Dark Spot Diameters in GaN and AlGaN

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Suppression of Iron Memory Effect in GaN Epitaxial Layers

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.947-953

2015

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Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Luminescence Characteristics in Hexagonal and Cubic‐Phase GaN on Micropatterned Si(100) Substrate

physica status solidi (b), 2022-01, Vol.259 (1), p.n/a

2022

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Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

physica status solidi (b), 2020-02, Vol.257 (2), p.n/a

2020

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X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

GaN and InGaN Based Nanocomposites for Ammonia Gas Sensing Applications

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Influence of Mg Out‐Diffusion Effect on the Threshold Voltage of GaN‐Based p‐Channel Heterostructure Field‐Effect Transistors

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates

Watt‐Class Green (530 nm) and Blue (465 nm) Laser Diodes

Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges

Temperature‐Dependent Charge Carrier Diffusion in [ 0001¯ ] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy

Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire

Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells

A Modeling Study of Electron Transport in GaN/AlGaN Superlattices Using Monte Carlo Simulation

Effective Schottky Barrier Height Model for N‐Polar and Ga‐Polar GaN by Polarization‐Induced Surface Charges with Finite Thickness

Pyramid Formation by Etching of InxGa1−xN/GaN Quantum Well Structures Grown on N‐face GaN for Nanooptical Light Emitters

Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks

Temperature Dependence of Dark Spot Diameters in GaN and AlGaN

Suppression of Iron Memory Effect in GaN Epitaxial Layers

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications

Luminescence Characteristics in Hexagonal and Cubic‐Phase GaN on Micropatterned Si(100) Substrate

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

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