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GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

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IEEE_Xplore

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Journal of physics. Condensed matter, 2024-08, Vol.36 (32)

2024

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Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1396-1407

2024

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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5365-5372

2018

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IEEE_Xplore

Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6

2023

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IEEE_Xplore

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3060-3066

2013

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IEEE_Xplore

Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6016-6022

2022

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IEEE_Xplore

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

IEEE electron device letters, 2020-08, Vol.41 (8), p.1177-1180

2020

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IEEE_Xplore

Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission

IEEE journal of quantum electronics, 2022-04, Vol.58 (2), p.1-6

2022

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IEEE_Xplore

Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

IEEE transactions on power electronics, 2016-01, Vol.31 (1), p.601-612

2016

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IEEE_Xplore

Investigation of Wide- and Ultrawide-Bandgap Semiconductors From Impact-Ionization Coefficients

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3999-4005

2020

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IEEE_Xplore

Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance

IEEE journal of emerging and selected topics in power electronics, 2021-08, Vol.9 (4), p.4026-4035

2021

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IEEE_Xplore

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

IEEE electron device letters, 2019-07, Vol.40 (7), p.1036-1039

2019

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IEEE_Xplore

(Ultra)Wide-Bandgap Vertical Power FinFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3960-3971

2020

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IEEE_Xplore

Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

IEEE transactions on electromagnetic compatibility, 2023-06, Vol.65 (3), p.794-803

2023

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IEEE_Xplore

High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1513-1517

2021

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IEEE_Xplore

ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

IEEE electron device letters, 2020-07, Vol.41 (7), p.1052-1055

2020

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IEEE_Xplore

AlGaN/GaN HEMT Based Biosensor for Detection of the HER2 Antigen Spiked in Human Serum

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4527-4533

2022

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IEEE_Xplore

A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.51-56

2022

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IEEE_Xplore

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4602-4605

2020

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IEEE_Xplore

GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

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IEEE_Xplore

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.707-719

2016

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IEEE_Xplore

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2262-2269

2022

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IEEE_Xplore

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

IEEE transactions on microwave theory and techniques, 2012-06, Vol.60 (6), p.1764-1783

2012

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IEEE_Xplore

10 MHz-Switching on GaN Trench CAVET up to 300 °C Operation Enabled by High Channel Mobility

IEEE electron device letters, 2024-04, Vol.45 (4), p.653-656

2024

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IEEE_Xplore

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GaN-on-Si Power Technology: Devices and Applications

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission

Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

Investigation of Wide- and Ultrawide-Bandgap Semiconductors From Impact-Ionization Coefficients

Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

(Ultra)Wide-Bandgap Vertical Power FinFETs

Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer

ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

AlGaN/GaN HEMT Based Biosensor for Detection of the HER2 Antigen Spiked in Human Serum

A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

10 MHz-Switching on GaN Trench CAVET up to 300 °C Operation Enabled by High Channel Mobility

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