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Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Journal of physics. Condensed matter, 2024-08, Vol.36 (32), p.325705

2024

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p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

IEEE electron device letters, 2019-07, Vol.40 (7), p.1036-1039

2019

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3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

IEEE electron device letters, 2020-08, Vol.41 (8), p.1177-1180

2020

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Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

IEEE transactions on power electronics, 2021-07, Vol.36 (7), p.7412-7416

2021

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Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance

IEEE journal of emerging and selected topics in power electronics, 2021-08, Vol.9 (4), p.4026-4035

2021

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ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

IEEE electron device letters, 2020-07, Vol.41 (7), p.1052-1055

2020

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Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission

IEEE journal of quantum electronics, 2022-04, Vol.58 (2), p.1-6

2022

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Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

IEEE transactions on power electronics, 2016-01, Vol.31 (1), p.601-612

2016

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Stability, Reliability, and Robustness of GaN Power Devices: A Review

IEEE transactions on power electronics, 2023-07, Vol.38 (7), p.8442-8471

2023

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Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

IEEE transactions on electromagnetic compatibility, 2023-06, Vol.65 (3), p.794-803

2023

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GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

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Deep traps in GaN-based structures as affecting the performance of GaN devices

Materials science & engineering. R, Reports : a review journal, 2015-08, Vol.94, p.1-56

2015

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Radiation Effects in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1-1

2022

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Broadband GaN MMIC Doherty Power Amplifier Using Continuous-Mode Combining for 5G Sub-6 GHz Applications

IEEE journal of solid-state circuits, 2022-07, Vol.57 (7), p.2143-2154

2022

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Evaluation and Application of 600 V GaN HEMT in Cascode Structure

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2453-2461

2014

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Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.707-719

2016

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A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

IEEE transactions on microwave theory and techniques, 2012-06, Vol.60 (6), p.1764-1783

2012

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An Integrated Driver With Bang-Bang Dead-Time Control and Charge Sharing Bootstrap Circuit for GaN Synchronous Buck Converter

IEEE transactions on power electronics, 2022-08, Vol.37 (8), p.9503-9514

2022

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Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes

IEEE transactions on power electronics, 2021-02, Vol.36 (2), p.1269-1273

2021

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Enhancing Bandwidth and Back-Off Range of Doherty Power Amplifier With Modified Load Modulation Network

IEEE transactions on microwave theory and techniques, 2021-04, Vol.69 (4), p.2291-2303

2021

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650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

IEEE electron device letters, 2018-02, Vol.39 (2), p.260-263

2018

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A Generic Theory for Design of Efficient Three-Stage Doherty Power Amplifiers

IEEE transactions on microwave theory and techniques, 2022-02, Vol.70 (2), p.1242-1253

2022

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A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

IEEE transactions on microwave theory and techniques, 2017-08, Vol.65 (8), p.2836-2846

2017

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Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

IEEE electron device letters, 2019-02, Vol.40 (2), p.275-278

2019

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Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

Physical review letters, 2016-01, Vol.116 (2), p.027401-027401, Article 027401

2016

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Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance

ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission

Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Deep traps in GaN-based structures as affecting the performance of GaN devices

Radiation Effects in AlGaN/GaN HEMTs

Broadband GaN MMIC Doherty Power Amplifier Using Continuous-Mode Combining for 5G Sub-6 GHz Applications

Evaluation and Application of 600 V GaN HEMT in Cascode Structure

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

An Integrated Driver With Bang-Bang Dead-Time Control and Charge Sharing Bootstrap Circuit for GaN Synchronous Buck Converter

Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes

Enhancing Bandwidth and Back-Off Range of Doherty Power Amplifier With Modified Load Modulation Network

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

A Generic Theory for Design of Efficient Three-Stage Doherty Power Amplifiers

A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

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