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Enhanced photoluminescence of heavily n -doped germanium

Applied physics letters, 2009-05, Vol.94 (19), p.191107-191107-3

2009

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Impurity-to-band activation energy in phosphorus doped diamond

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Applied physics letters, 2012-10, Vol.101 (18)

2012

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Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers

Physical review. B, Condensed matter and materials physics, 2013-08, Vol.88 (6), Article 064508

2013

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Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

Journal of applied physics, 2007-06, Vol.101 (11), p.113701-113701-4

2007

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Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (2), Article 020501

2010

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Superconducting properties of laser annealed implanted Si:B epilayers

Superconductor science & technology, 2013-04, Vol.26 (4), p.45009-4

2013

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Silicon incorporation in CVD diamond layers

Physica status solidi. A, Applications and materials science, 2005-09, Vol.202 (11), p.2177-2181

2005

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Cathodoluminescence as a tool to determine the phosphorus concentration in diamond

Physica status solidi. A, Applications and materials science, 2007-09, Vol.204 (9), p.2965-2970

2007

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n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

Physica status solidi. A, Applications and materials science, 2006-09, Vol.203 (12), p.3136-3141

2006

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Conversion of p-type to n-type diamond by exposure to a deuterium plasma

Journal of applied physics, 2004-12, Vol.96 (12), p.7060-7065

2004

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Improvement of the electrical properties of compensated phosphorus-doped diamond by high temperature annealing

Physica status solidi. A, Applications and materials science, 2005-09, Vol.202 (11), p.2141-2147

2005

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Temperature and strain mappings over forward biased power IGBT cross-section area by μ-Raman spectroscopy

2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015, p.1-9

2015

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IEEE_Xplore

Shallow donor induced n-type conductivity in deuterated boron-doped diamond

Physica status solidi. A, Applied research, 2004-09, Vol.201 (11), p.2444-2450

2004

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The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.

Surface and interface analysis, 2011-01, Vol.43 (1-2), p.36-40

2011

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The Superconducting Transition in Boron Doped Silicon Films

Acta physica Polonica, A, 2010-11, Vol.118 (5), p.1026-1027

2010

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Top-metal ageing effects on electro-thermal distributions in an IGBT chip under short circuit conditions

2013 15th European Conference on Power Electronics and Applications (EPE), 2013, p.1-9

2013

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IEEE_Xplore

Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser

2009 6th IEEE International Conference on Group IV Photonics, 2009, p.259-261

2009

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IEEE_Xplore

Different Approaches for the n-type Doping of Diamond

2007 International Workshop on Physics of Semiconductor Devices, 2007, p.813-818

2007

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IEEE_Xplore

Mechanical and thermal stresses characterization maps on cross-sections of forward biased electronic power devices

2015 IEEE International Reliability Physics Symposium, 2015, p.FA.2.1-FA.2.8

2015

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IEEE_Xplore

The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.

Surface and interface analysis, 2011-01, Vol.43 (1-2), p.36-40

2011

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Cross Correlation Method for Images Alignment: Application to 4 Buckets Calculation in Thermoreflectance

2021 37th Semiconductor Thermal Measurement, Modeling & Management Symposium (SEMI-THERM), 2021, p.72-77

2021

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Cross Correlation Method for Images Alignment: Application to 4 Buckets Calculation in Thermoreflectance

2020 36th Semiconductor Thermal Measurement, Modeling & Management Symposium (SEMI-THERM), 2020, p.137-142

2020

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Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD)

Physica status solidi. C, 2011-03, Vol.8 (3), p.915-918

2011

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Enhanced photoluminescence of heavily n -doped germanium

Impurity-to-band activation energy in phosphorus doped diamond

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers

Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Superconducting properties of laser annealed implanted Si:B epilayers

Silicon incorporation in CVD diamond layers

Cathodoluminescence as a tool to determine the phosphorus concentration in diamond

n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

Conversion of p-type to n-type diamond by exposure to a deuterium plasma

Improvement of the electrical properties of compensated phosphorus-doped diamond by high temperature annealing

Temperature and strain mappings over forward biased power IGBT cross-section area by μ-Raman spectroscopy

Shallow donor induced n-type conductivity in deuterated boron-doped diamond

The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.

The Superconducting Transition in Boron Doped Silicon Films

Top-metal ageing effects on electro-thermal distributions in an IGBT chip under short circuit conditions

Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser

Different Approaches for the n-type Doping of Diamond

Mechanical and thermal stresses characterization maps on cross-sections of forward biased electronic power devices

The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.

Cross Correlation Method for Images Alignment: Application to 4 Buckets Calculation in Thermoreflectance

Cross Correlation Method for Images Alignment: Application to 4 Buckets Calculation in Thermoreflectance

Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD)

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