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Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Applied physics letters, 2014-06, Vol.104 (25)

2014

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Toward surface-enhanced Raman scattering using electroless substrate for trace arsenic detection and speciation

Journal of applied physics, 2023-02, Vol.133 (7)

2023

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Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

Applied physics letters, 2014-07, Vol.105 (2)

2014

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Ferroptosis-inducing inorganic arsenic(II) sulfide nanocrystals enhance immune activation

Nano research, 2023-07, Vol.16 (7), p.9760-9767

2023

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Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

Journal of applied physics, 2010-12, Vol.108 (11), p.114316-114316-7

2010

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Single photon emission at 1.55 μ m from charged and neutral exciton confined in a single quantum dash

Applied physics letters, 2014-07, Vol.105 (2)

2014

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Comparative analysis of quantum cascade laser modeling based on density matrices and non-equilibrium Green's functions

Applied physics letters, 2014-09, Vol.105 (10)

2014

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High-performance quantum ring detector for the 1-3 terahertz range

Applied physics letters, 2010-06, Vol.96 (23), p.231103-231103-3

2010

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Thermal conduction in lattice–matched superlattices of InGaAs/InAlAs

Applied physics letters, 2014-08, Vol.105 (5)

2014

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Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy

Journal of applied physics, 2020-07, Vol.128 (2)

2020

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High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

Journal of applied physics, 2010-12, Vol.108 (12), p.123702-123702-5

2010

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Ultrafast Detection of Arsenic Using Carbon-Fiber Microelectrodes and Fast-Scan Cyclic Voltammetry

Micromachines (Basel), 2024-05, Vol.15 (6), p.733

2024

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Observation of atomic ordering of triple-period-A and -B type in GaAsBi

Applied physics letters, 2014-07, Vol.105 (4)

2014

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Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation

Journal of applied physics, 2017-02, Vol.121 (7)

2017

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Highly textured oxypnictide superconducting thin films on metal substrates

Applied physics letters, 2014-10, Vol.105 (17)

2014

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GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

Applied physics letters, 2013-03, Vol.102 (11)

2013

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Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 μ m

Applied physics letters, 2014-09, Vol.105 (12)

2014

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Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

Applied physics letters, 2011-03, Vol.98 (12)

2011

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Extremely scaled high- k /In0.53Ga0.47As gate stacks with low leakage and low interface trap densities

Journal of applied physics, 2014-09, Vol.116 (12)

2014

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Analytical description of the metal-assisted growth of III-V nanowires: Axial and radial growths

Journal of applied physics, 2009-06, Vol.105 (11), p.114304-114304-8

2009

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Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

Applied physics letters, 2010-08, Vol.97 (5), p.051111-051111-3

2010

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Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires

Applied physics letters, 2011-04, Vol.98 (15), p.152103-152103-3

2011

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Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs

Journal of applied physics, 2012-11, Vol.112 (9)

2012

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Experimental verification of the reversibility window concept in binary As-Se glasses subjected to a long-term physical aging

Physical review. B, Condensed matter and materials physics, 2008-07, Vol.78 (1), Article 014202

2008

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In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy

Applied physics letters, 2010-07, Vol.97 (4), p.042509-042509-3

2010

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Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Toward surface-enhanced Raman scattering using electroless substrate for trace arsenic detection and speciation

Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

Ferroptosis-inducing inorganic arsenic(II) sulfide nanocrystals enhance immune activation

Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

Single photon emission at 1.55 μ m from charged and neutral exciton confined in a single quantum dash

Comparative analysis of quantum cascade laser modeling based on density matrices and non-equilibrium Green's functions

High-performance quantum ring detector for the 1-3 terahertz range

Thermal conduction in lattice–matched superlattices of InGaAs/InAlAs

Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy

High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

Ultrafast Detection of Arsenic Using Carbon-Fiber Microelectrodes and Fast-Scan Cyclic Voltammetry

Observation of atomic ordering of triple-period-A and -B type in GaAsBi

Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation

Highly textured oxypnictide superconducting thin films on metal substrates

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 μ m

Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

Extremely scaled high- k /In0.53Ga0.47As gate stacks with low leakage and low interface trap densities

Analytical description of the metal-assisted growth of III-V nanowires: Axial and radial growths

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires

Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs

Experimental verification of the reversibility window concept in binary As-Se glasses subjected to a long-term physical aging

In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy

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