UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

Applied physics letters, 1998-08, Vol.73 (6), p.797-799

1998

Volltextzugriff (PDF)

Highly anisotropic photoenhanced wet etching of n-type GaN

Applied physics letters, 1997-10, Vol.71 (15), p.2151-2153

1997

Volltextzugriff (PDF)

Smooth n-type GaN surfaces by photoenhanced wet etching

Applied physics letters, 1998-02, Vol.72 (5), p.560-562

1998

Volltextzugriff (PDF)

Rapid evaluation of dislocation densities in n -type GaN films using photoenhanced wet etching

Applied physics letters, 1999-06, Vol.74 (23), p.3537-3539

1999

Volltextzugriff (PDF)

The 2018 GaN power electronics roadmap

Journal of physics. D, Applied physics, 2018-04, Vol.51 (16), p.163001

2018

Volltextzugriff (PDF)

Dopant-selective photoenhanced wet etching of GaN

Journal of electronic materials, 1998-04, Vol.27 (4), p.282-287

1998

Volltextzugriff (PDF)

Demonstration of thin-film GaN Schottky diodes fabricated with epitaxial lift-off

2016 74th Annual Device Research Conference (DRC), 2016, p.1-2

2016

Volltextzugriff (PDF)

(Invited) Epitaxial Lift-Off of GaN and Related Materials for Device Applications

ECS transactions, 2019-07, Vol.92 (4), p.97-102

2019

Volltextzugriff (PDF)

Characteristics of chemically assisted ion beam etching of gallium nitride

Applied physics letters, 1994-08, Vol.65 (7), p.889-891

1994

Volltextzugriff (PDF)

Quantitative survey of narirutin, naringin, hesperidin, and neohesperidin in citrus

Journal of agricultural and food chemistry, 1987-11, Vol.35 (6), p.1027-1030

1987

Volltextzugriff (PDF)

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage

2018 76th Device Research Conference (DRC), 2018, p.1-2

2018

Volltextzugriff (PDF)

(Invited) Fabrication and Applications of High-Efficiency, Lightweight, Multi-Junction Solar Cells by Epitaxial Liftoff

ECS transactions, 2015-04, Vol.66 (7), p.89-93

2015

Volltextzugriff (PDF)

Chemically assisted ion beam etching of gallium nitride

Journal of electronic materials, 1995-04, Vol.24 (4), p.229-234

1995

Volltextzugriff (PDF)

Photoelectrochemical etching of GaN

MRS proceedings, 1997, Vol.468, Article 349

1997

Volltextzugriff (PDF)

Sidewall gated double well quasi-one-dimensional resonant tunneling transistors

Applied physics letters, 1997-12, Vol.71 (23), p.3379-3381

1997

Volltextzugriff (PDF)

Self-aligned sidewall gated resonant tunneling transistors

Applied physics letters, 1996-07, Vol.69 (3), p.374-376

1996

Volltextzugriff (PDF)

Dry and Wet Etching for Group III – Nitrides

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.38-48

1999

Volltextzugriff (PDF)

Characterization of chemically assisted ion beam etching of InP

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1994-11, Vol.12 (6), p.3317-3321

1994

Volltextzugriff (PDF)

Quasi one-dimensional confinement in double-well sidewall gated resonant tunneling transistors

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.597-600

1997

Volltextzugriff (PDF)

Dopant-selective photoenhanced wet etching of GaN : III-V nitrides and silicon carbide

Journal of electronic materials, 1998, Vol.27 (4), p.282-287

1998

Volltextzugriff (PDF)

Fungicide Control of Albinism in Citrus Seedlings Caused by Alternaria tenuis

Plant disease, 1984, Vol.68 (1), p.43

Barmore, C. R.

1984

Volltextzugriff (PDF)

Fabrication of nanostructures in AlGaSb/InAs using electron-beam lithography and chemically assisted ion-beam etching

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1994-11, Vol.12 (6), p.3623-3625

1994

Volltextzugriff (PDF)

S4-P8: Applications for epitaxial lift-off of III-V materials

2014 Lester Eastman Conference on High Performance Devices (LEC), 2014, p.1-3

2014

Volltextzugriff (PDF)

Photoluminescence of Wet- and Dry-Etched Gallium Nitride

MRS proceedings, 1997, Vol.482, Article 997

1997

Volltextzugriff (PDF)

InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, 1997, Vol.1, p.278-279 vol.1

1997

Volltextzugriff (PDF)

1 – 25 von 41

Suche als RSS-Feed

Aktive Filter

KollektionIngenta

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(21)
Mit Volltextzugriff
(21)

Publikationsform

Artikel
(29)
Tagungsberichte
(12)

Sprache

Englisch
(41)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

Highly anisotropic photoenhanced wet etching of n-type GaN

Smooth n-type GaN surfaces by photoenhanced wet etching

Rapid evaluation of dislocation densities in n -type GaN films using photoenhanced wet etching

The 2018 GaN power electronics roadmap

Dopant-selective photoenhanced wet etching of GaN

Demonstration of thin-film GaN Schottky diodes fabricated with epitaxial lift-off

(Invited) Epitaxial Lift-Off of GaN and Related Materials for Device Applications

Characteristics of chemically assisted ion beam etching of gallium nitride

Quantitative survey of narirutin, naringin, hesperidin, and neohesperidin in citrus

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage

(Invited) Fabrication and Applications of High-Efficiency, Lightweight, Multi-Junction Solar Cells by Epitaxial Liftoff

Chemically assisted ion beam etching of gallium nitride

Photoelectrochemical etching of GaN

Sidewall gated double well quasi-one-dimensional resonant tunneling transistors

Self-aligned sidewall gated resonant tunneling transistors

Dry and Wet Etching for Group III – Nitrides

Characterization of chemically assisted ion beam etching of InP

Quasi one-dimensional confinement in double-well sidewall gated resonant tunneling transistors

Dopant-selective photoenhanced wet etching of GaN : III-V nitrides and silicon carbide

Fungicide Control of Albinism in Citrus Seedlings Caused by Alternaria tenuis

Fabrication of nanostructures in AlGaSb/InAs using electron-beam lithography and chemically assisted ion-beam etching

S4-P8: Applications for epitaxial lift-off of III-V materials

Photoluminescence of Wet- and Dry-Etched Gallium Nitride

InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

Aktive Filter

Suchergebnisse filtern