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Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation

Advanced materials (Weinheim), 2011-09, Vol.23 (36), p.4178-4182

2011

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Emergence of Quantum Tunneling in Ambipolar Black Phosphorus Multilayers without Heterojunctions

Advanced functional materials, 2022-03, Vol.32 (13), p.n/a

2022

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Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor

Advanced functional materials, 2021-06, Vol.31 (23), p.n/a

2021

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Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

Advanced materials (Weinheim), 2019-02, Vol.31 (6), p.e1805860-n/a

2019

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Doping‐Induced Performance Improvement in ReS2 Field Effect Transistors: Exploring a Heterostructure with In2O3 Quantum Dots

Advanced electronic materials, 2024-07, Vol.10 (7), p.n/a

2024

Volltextzugriff (PDF)

Modification of Electrical Properties of Graphene by Substrate-Induced Nanomodulation

Nano letters, 2013-08, Vol.13 (8), p.3494-3500

2013

Volltextzugriff (PDF)

Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

ACS nano, 2014-11, Vol.8 (11), p.11753-11762

2014

Volltextzugriff (PDF)

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Journal of physical chemistry. C, 2014-11, Vol.118 (46), p.26454-26461

2014

Volltextzugriff (PDF)

Tunable Band‐to‐Band Tunneling and Conducting Path Transition in Local‐Control‐Gate Heterostructure Transistor

Advanced functional materials, 2024-07

2024

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Facile Fabrication of SWCNT/SnO2 Nanowire Heterojunction Devices on Flexible Polyimide Substrate

Advanced functional materials, 2011-11, Vol.21 (21), p.4159-4165

2011

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Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials

Advanced electronic materials, 2021-09, Vol.7 (9), p.n/a

2021

Volltextzugriff (PDF)

Reconfigurable Si Nanowire Nonvolatile Transistors

Advanced electronic materials, 2018-01, Vol.4 (1), p.n/a

2018

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Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation

NPJ 2D materials and applications, 2021-01, Vol.5 (1), p.1-9, Article 4

2021

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Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub‑5 nm Thick Electrostatically Highly Doped Channel

ACS applied materials & interfaces, 2023-02, Vol.15 (6), p.8298-8304

2023

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Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Nanoscale, 2014-01, Vol.6 (1), p.433-441

2014

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Restricted Channel Migration in 2D Multilayer ReS2

ACS applied materials & interfaces, 2021-04, Vol.13 (16), p.19016-19022

2021

Volltextzugriff (PDF)

Energy-Efficient III–V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing

ACS applied materials & interfaces, 2022-06, Vol.14 (21), p.24592-24601

2022

Volltextzugriff (PDF)

Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

Nanoscale, 2018-10, Vol.10 (37), p.17557-17566

2018

Volltextzugriff (PDF)

Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

Advanced materials (Weinheim), 2012-05, Vol.24 (19), p.2631-2636

2012

Volltextzugriff (PDF)

Electric Property Evolution of Structurally Defected Multilayer Graphene

Nano letters, 2008-10, Vol.8 (10), p.3092-3096

2008

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Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

ACS applied materials & interfaces, 2020-09, Vol.12 (39), p.43927-43932

2020

Volltextzugriff (PDF)

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping

ACS applied materials & interfaces, 2017-12, Vol.9 (49), p.42912-42918

2017

Volltextzugriff (PDF)

Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET

Nanotechnology, 2021-04, Vol.32 (16), p.165202-165202

2021

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Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

Nanotechnology, 2016-09, Vol.27 (38), p.385703-385703

2016

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Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires

Nanoscale, 2019-03, Vol.11 (10), p.4219-4225

2019

Volltextzugriff (PDF)

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Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation

Emergence of Quantum Tunneling in Ambipolar Black Phosphorus Multilayers without Heterojunctions

Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor

Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

Doping‐Induced Performance Improvement in ReS2 Field Effect Transistors: Exploring a Heterostructure with In2O3 Quantum Dots

Modification of Electrical Properties of Graphene by Substrate-Induced Nanomodulation

Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Tunable Band‐to‐Band Tunneling and Conducting Path Transition in Local‐Control‐Gate Heterostructure Transistor

Facile Fabrication of SWCNT/SnO2 Nanowire Heterojunction Devices on Flexible Polyimide Substrate

Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials

Reconfigurable Si Nanowire Nonvolatile Transistors

Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation

Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub‑5 nm Thick Electrostatically Highly Doped Channel

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Restricted Channel Migration in 2D Multilayer ReS2

Energy-Efficient III–V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing

Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

Electric Property Evolution of Structurally Defected Multilayer Graphene

Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping

Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET

Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires

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