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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.981-987

2024

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Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.931-935

2019

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Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.716-716

2020

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High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.481-484

2020

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Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.23-26

2016

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Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184), 2020, p.137-142

2020

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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

Proceedings of the 2015 International Conference on Microelectronic Test Structures, 2015, p.163-168

2015

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Simulation of E-Mode p-Channel GaN/AlGaN HFETs with Hybrid AlGaN Barrier Layer

2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC), 2023, p.1-3

2023

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Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ

2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS), 2024, p.1079-1082

2024

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Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020, p.1-4

2020

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Investigation on Premature Breakdown Mechanisms in AlGaN/GaN HEMTs by TCAD simulations

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020, p.1-3

2020

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Impact of structural modification by spacer layer inclusion on AlGaN/GaN HEMT performance

2021 International Conference on Information and Communication Technology for Sustainable Development (ICICT4SD), 2021, p.76-81

2021

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L-Band 10-kW AlGaN/GaN HEMT with operating voltage of 100V

2020 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), 2020, p.114-115

2020

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UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

2021 IEEE Radio and Wireless Symposium (RWS), 2021, p.168-170

2021

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10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.374-377

2023

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Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes

2024 Device Research Conference (DRC), 2024, p.1-2

2024

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Demonstration of Ultra Low 2DEG Sheet Resistance Using Al-Enriched AlGaN Layer in the AlXGa1-XN/AlN/GaN Heterojunction

2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024, p.237-240

2024

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Stress-Engineered AlGaN/GaN High Electron Mobility Transistors Design

2021 Devices for Integrated Circuit (DevIC), 2021, p.471-473

2021

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On the modelling of interface roughness scattering in AlGaN/GaN heterostructures

2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), 2020, p.22-27

2020

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First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates

2022 Device Research Conference (DRC), 2022, p.1-2

2022

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Self-Heating in the HEMT AlGaN/GaN transistor

2020 IEEE 2nd International Conference on Electronics, Control, Optimization and Computer Science (ICECOCS), 2020, p.1-6

2020

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Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes

2023 Device Research Conference (DRC), 2023, p.1-2

Fleetwood, Daniel M.

2023

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Evaluation of Device Performance on AlGaN/InGaN/GaN High Electron Mobility Transistors (HEMTs) using TCAD Software

2019 IEEE International Conference on Clean Energy and Energy Efficient Electronics Circuit for Sustainable Development (INCCES), 2019, p.1-3

2019

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

An AlN/Al0.85Ga0.15N high electron mobility transistor

Simulation of E-Mode p-Channel GaN/AlGaN HFETs with Hybrid AlGaN Barrier Layer

Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ

Gate Reliability and VTH Stability Investigations of p-GaN HEMTs

Investigation on Premature Breakdown Mechanisms in AlGaN/GaN HEMTs by TCAD simulations

Impact of structural modification by spacer layer inclusion on AlGaN/GaN HEMT performance

L-Band 10-kW AlGaN/GaN HEMT with operating voltage of 100V

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer

Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes

Demonstration of Ultra Low 2DEG Sheet Resistance Using Al-Enriched AlGaN Layer in the AlXGa1-XN/AlN/GaN Heterojunction

Stress-Engineered AlGaN/GaN High Electron Mobility Transistors Design

On the modelling of interface roughness scattering in AlGaN/GaN heterostructures

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates

Self-Heating in the HEMT AlGaN/GaN transistor

Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes

Evaluation of Device Performance on AlGaN/InGaN/GaN High Electron Mobility Transistors (HEMTs) using TCAD Software

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