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Electron transport and full-band electron-phonon interactions in graphene

Journal of applied physics, 2008-03, Vol.103 (5), p.053702-053702-8

2008

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Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

Materials science forum, 2012-05, Vol.717-720, p.465-468

2012

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Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Journal of applied physics, 2006-08, Vol.100 (4)

2006

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A novel high energy density flexible galvanic cell

Energy & environmental science, , Vol.4 (5), p.1807

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Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

Materials science forum, 2009-01, Vol.600-603, p.807-810

2009

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Geometry enhanced asymmetric rectifying tunneling diodes

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-11, Vol.28 (6), p.C6-C6O55

2010

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A new process for the fabrication of planar antenna coupled Ni–NiOx–Ni tunnel junction devices

Microelectronic engineering, 2012-10, Vol.98, p.329-333

2012

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A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

Journal of applied physics, 2006-08, Vol.100 (4)

2006

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Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation

Materials science forum, 2012-05, Vol.717-720, p.457-460

2012

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Physics-based numerical modeling and characterization of 6H -silicon-carbide metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 2002-10, Vol.92 (7), p.4053-4061

2002

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Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

Materials science forum, 2006-10, Vol.527-529, p.1317-1320

2006

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Large Area Silicon Carbide Photodiode, and Monolithic Readout Design and Fabrication

Materials Science Forum, 2016-05, Vol.858, p.1023-1027

2016

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High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation

Journal of applied physics, 2009-02, Vol.105 (3)

2009

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Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO sub(2) Interface during Nitric Oxide Passivation - A First Principles Study

Materials Science Forum, 2016-05, Vol.858, p.465-468

2016

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SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits

Materials Science Forum, 2016-05, Vol.858, p.1070-1073

2016

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Comparison of 4H-SiC impact ionization models using experiments and self-consistent simulations

Journal of applied physics, 2008-07, Vol.104 (2)

2008

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Terahertz current oscillations in single-walled zigzag carbon nanotubes

Physical review letters, 2007-04, Vol.98 (16), p.166803-166803, Article 166803

2007

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Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study

Materials science forum, 2016-05, Vol.858, p.465-468

2016

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Self-consistent ensemble Monte Carlo simulations show terahertz oscillations in single-walled carbon nanotubes

Journal of applied physics, 2007-10, Vol.102 (7), p.073720-073720-7

2007

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Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements

Materials science forum, 2015-06, Vol.821-823, p.697-700

2015

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A novel high energy density flexible galvanic cell

Energy & environmental science, 2011-01, Vol.4 (5), p.1807-1812

2011

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High field density-functional-theory based Monte Carlo: 4 H -SiC impact ionization and velocity saturation

Journal of applied physics, 2009-02, Vol.105 (3), p.033703-033703-7

2009

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Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics

Materials science forum, 2010-01, Vol.645-648, p.983-986

2010

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Comparison of 4 H -SiC impact ionization models using experiments and self-consistent simulations

Journal of applied physics, 2008-07, Vol.104 (2), p.026101-026101-3

2008

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Controlled on-chip heat transfer for directed heating and temperature reduction

Solid-state electronics, 2009-06, Vol.53 (6), p.590-598

2009

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Electron transport and full-band electron-phonon interactions in graphene

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

A novel high energy density flexible galvanic cell

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

Geometry enhanced asymmetric rectifying tunneling diodes

A new process for the fabrication of planar antenna coupled Ni–NiOx–Ni tunnel junction devices

A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation

Physics-based numerical modeling and characterization of 6H -silicon-carbide metal–oxide–semiconductor field-effect transistors

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

Large Area Silicon Carbide Photodiode, and Monolithic Readout Design and Fabrication

High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO sub(2) Interface during Nitric Oxide Passivation - A First Principles Study

SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits

Comparison of 4H-SiC impact ionization models using experiments and self-consistent simulations

Terahertz current oscillations in single-walled zigzag carbon nanotubes

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study

Self-consistent ensemble Monte Carlo simulations show terahertz oscillations in single-walled carbon nanotubes

Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements

A novel high energy density flexible galvanic cell

High field density-functional-theory based Monte Carlo: 4 H -SiC impact ionization and velocity saturation

Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics

Comparison of 4 H -SiC impact ionization models using experiments and self-consistent simulations

Controlled on-chip heat transfer for directed heating and temperature reduction

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