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The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices

Solid-state electronics, 2000-02, Vol.44 (2), p.221-228

2000

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Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates

MRS proceedings, 1995, Vol.395, Article 243

1995

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Theoretical investigations of spin splittings in asymmetric AlSb/InAs/GaSb heterostructures and the possibility of electric field induced magnetization

Superlattices and microstructures, 2001-12, Vol.30 (6), p.309-319

2001

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Nitridation of epitaxially grown 6.1 Å semiconductors studied by X-ray photoelectron spectroscopy

Applied surface science, 2004-01, Vol.222 (1-4), p.6-12

2004

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The peroxy radical model for the chemisorption of O2 onto silicon surfaces

Solid state communications, 1976-01, Vol.18 (8), p.981-984

1976

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Schottky barrier heights on p-type diamond and silicon carbide (6h)

Physics letters. A, , Vol.58 (4), p.249-251

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Exciton capture cross sections of indium and boron impurities in silicon

Solid state communications, 1980-12, Vol.36 (12), p.1039-1045

1980

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Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer

Journal of crystal growth, 2000, Vol.208 (1), p.183-188

2000

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Megaplasmid and chromosomal loci for the PHB degradation pathway in Rhizobium (Sinorhizobium) meliloti

Genetics (Austin), 1997-08, Vol.146 (4), p.1211-1220

1997

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Theoretical Investigations of Spin Splittings and Optimization of the Rashba Coefficient in Asymmetric AlSb/InAs/GaSb Heterostructures

Journal of computational electronics, 2002-07, Vol.1 (1-2), p.141-146

2002

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n-CdSe/p-ZnTe based wide band-gap light emitters : numerical simulation and design

Journal of applied physics, 1993-05, Vol.73 (9), p.4660-4668

1993

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Systematics of bound excitons and bound multiexciton complexes for shallow donors in silicon

Solid state communications, 1978-01, Vol.28 (7), p.491-496

1978

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Nitride based high power devices: design and fabrication issues

Solid-state electronics, 1998-12, Vol.42 (12), p.2289-2294

1998

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Binding of an exciton to a neutral acceptor

Solid state communications, 1976-01, Vol.18 (11), p.1557-1560

1976

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Luminescence of bound exciton and bound multiexciton complexes in Si:Li

Solid state communications, , Vol.28 (4), p.317-320

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Bound exciton lifetimes for acceptors in Si

Solid state communications, 1977-08, Vol.23 (7), p.425-428

1977

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Absorption and luminescence of the bound exciton in thallium doped silicon

Solid state communications, 1978-07, Vol.27 (3), p.317-320

1978

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Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures

Journal of computational electronics, 2002-07, Vol.1 (1-2), p.147-151

2002

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Improved growth morphology of Si–Ge–C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy

Thin solid films, 1997-02, Vol.294 (1), p.105-111

1997

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Compositionally Dependent Band Offsets In Aln/Al x Ga 1-x N Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy

MRS proceedings, 1997, Vol.482, Article 775

1997

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Temperature Dependence of Surface Morphology of Silicon Grown on CaF 2 /Si by Electron Beam Assisted Mbe

MRS proceedings, 1994, Vol.367, Article 305

1994

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Temperature Dependence of Surface Morphology of Silicon Grown on CaF2/Si by Electron Beam Assisted Mbe

MRS proceedings, 1994, Vol.367

1994

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Model calculations for n-CdZnS light emitter grown on p-GaN hole injector

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.502-505

1996

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Tunneling spectroscopy of resonant interband tunneling structures

Solid state communications, 1997, Vol.101 (8), p.607-610

1997

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Compositionally Dependent Band Offsets In Aln/AlxGa1-xN Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy

MRS proceedings, 1997, Vol.482

1997

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The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices

Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates

Theoretical investigations of spin splittings in asymmetric AlSb/InAs/GaSb heterostructures and the possibility of electric field induced magnetization

Nitridation of epitaxially grown 6.1 Å semiconductors studied by X-ray photoelectron spectroscopy

The peroxy radical model for the chemisorption of O2 onto silicon surfaces

Schottky barrier heights on p-type diamond and silicon carbide (6h)

Exciton capture cross sections of indium and boron impurities in silicon

Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer

Megaplasmid and chromosomal loci for the PHB degradation pathway in Rhizobium (Sinorhizobium) meliloti

Theoretical Investigations of Spin Splittings and Optimization of the Rashba Coefficient in Asymmetric AlSb/InAs/GaSb Heterostructures

n-CdSe/p-ZnTe based wide band-gap light emitters : numerical simulation and design

Systematics of bound excitons and bound multiexciton complexes for shallow donors in silicon

Nitride based high power devices: design and fabrication issues

Binding of an exciton to a neutral acceptor

Luminescence of bound exciton and bound multiexciton complexes in Si:Li

Bound exciton lifetimes for acceptors in Si

Absorption and luminescence of the bound exciton in thallium doped silicon

Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures

Improved growth morphology of Si–Ge–C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy

Compositionally Dependent Band Offsets In Aln/Al x Ga 1-x N Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy

Temperature Dependence of Surface Morphology of Silicon Grown on CaF 2 /Si by Electron Beam Assisted Mbe

Temperature Dependence of Surface Morphology of Silicon Grown on CaF2/Si by Electron Beam Assisted Mbe

Model calculations for n-CdZnS light emitter grown on p-GaN hole injector

Tunneling spectroscopy of resonant interband tunneling structures

Compositionally Dependent Band Offsets In Aln/AlxGa1-xN Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy

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