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A 0.000747 %/V, 64.59 dB PSRR CMOS-only voltage reference for ultra-low power WSN applications

International journal of electronics and communications, 2022-12, Vol.157, p.154420, Article 154420

2022

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A 0.001-mm2 112.32-μW All-Digital PLL with Dual-Tuned DCO and Dual-Tuned Control Algorithm

Circuits, systems, and signal processing, 2022-03, Vol.41 (3), p.1563-1576

2022

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A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOS

Electronics (Basel), 2022-06, Vol.11 (11)

2022

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A 0.0018 mm frequency-to-digital-converter-based CMOS smart temperature sensor

Analog integrated circuits and signal processing, 2010-08, Vol.64 (2), p.153-157

2010

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A 0.004% resolution & SAT<1.8 μson-chip adaptive anti-aging system using cuckoo intelligence-based algorithm in 65 nm CMOS

Integration (Amsterdam), 2021-05, Vol.78, p.135-143

2021

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A 0.00426 mm[sup.2] 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

Electronics (Basel), 2022-11, Vol.11 (21)

2022

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A 0.0106 mm2 8nW Resistor-Less BJT Bandgap Reference in 65nm

ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC), 2023, p.85-88

2023

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IEEE_Xplore

A 0.021mm2 92dB-SNDR 88kHz-BW Incremental Zoom ADC with 2nd-order RT-DEM and Quiet Chopping

ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC), 2023, p.293-296

2023

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IEEE_Xplore

A 0.023–12 GHz ultra-wideband frequency synthesizer with FOMT of −251.8 dB

Microelectronics, 2022-02, Vol.120, Article 105357

2022

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0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation Monitoring

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(6), 78, pp.920-926

2017

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A 0.05-6 GHz voltage-mode harmonic rejection mixer with up to 30 dBm in-band IIP3 and 35 dBc HRR in 32 nm SOI CMOS

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2017, p.304-307

2017

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A 0.05 m Change in Inertial Measurement Unit Placement Alters Time and Frequency Domain Metrics during Running

Sensors (Basel, Switzerland), 2024-01, Vol.24 (2), p.656

2024

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A 0.053 mm2 10-bit 10-ks/s 40-nW SAR ADC with pseudo single ended switching procedure for bio-related applications

Microelectronics, 2023-09, Vol.139, p.105868, Article 105868

2023

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A 0.058mm224μW Temperature Sensor in 40nm CMOS Process with ±0.5∘C Inaccuracy from − 55 to 175∘C

Circuits, systems, and signal processing, 2018, Vol.37 (6), p.2278-2298

2018

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A 0.05pJ/Pixel 70fps FHD 1Meps Event-Driven Visual Data Processing Unit

2020 IEEE Symposium on VLSI Circuits, 2020, p.1-2

2020

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IEEE_Xplore

0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers

Solid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647

1997

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A 0.1–1 GHz low power RF receiver front-end with noise cancellation technique for WSN applications

International journal of electronics and communications, 2018-01, Vol.83, p.288-294

2018

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A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applications

Microsystem technologies : sensors, actuators, systems integration, 2020-07, Vol.26 (7), p.2279-2293

2020

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A 0.1–4.5 GHz MMIC Controlled Digital Step Attenuator Based on SiGe

Instruments and experimental techniques (New York), 2019-04, Vol.62 (2), p.175-184

2019

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A 0.1–4 GHz SDR receiver with reconfigurable 10–100 MHz signal bandwidth in 65 nm CMOS

Analog integrated circuits and signal processing, 2013-12, Vol.77 (3), p.567-582

2013

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A 0.1-40 GHz broadband MEMS clamped-clamped beam capacitive power sensor based on GaAs technology

Journal of micromechanics and microengineering, 2014-06, Vol.24 (6), p.65024-7

2014

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A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

Microelectronics, 2018-02, Vol.72, p.58-73

2018

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A 0.1–5.0 GHz SDR transmitter with current-mode power-mixer and self-calibration scheme in 65 nm CMOS

Microelectronics, 2017-12, Vol.70, p.1-11

2017

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A 0.1 DEG/H Module-Level Silicon Mems Rate Integrating Gyroscope Using Virtually Rotated Donut-Mass Structure and Demonstration of the Earth's Rotation Detection

2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), 2021, p.402-405

2021

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0.1-Micrometer scaling by 1:1 synchrotron radiation lithography

Microelectronic engineering, 1992-11, Vol.18 (4), p.333-340

1992

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1 – 25 von 921.326

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A 0.000747 %/V, 64.59 dB PSRR CMOS-only voltage reference for ultra-low power WSN applications

A 0.001-mm2 112.32-μW All-Digital PLL with Dual-Tuned DCO and Dual-Tuned Control Algorithm

A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOS

A 0.0018 mm frequency-to-digital-converter-based CMOS smart temperature sensor

A 0.004% resolution & SAT<1.8 μson-chip adaptive anti-aging system using cuckoo intelligence-based algorithm in 65 nm CMOS

A 0.00426 mm[sup.2] 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

A 0.0106 mm2 8nW Resistor-Less BJT Bandgap Reference in 65nm

A 0.021mm2 92dB-SNDR 88kHz-BW Incremental Zoom ADC with 2nd-order RT-DEM and Quiet Chopping

A 0.023–12 GHz ultra-wideband frequency synthesizer with FOMT of −251.8 dB

0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation Monitoring

A 0.05-6 GHz voltage-mode harmonic rejection mixer with up to 30 dBm in-band IIP3 and 35 dBc HRR in 32 nm SOI CMOS

A 0.05 m Change in Inertial Measurement Unit Placement Alters Time and Frequency Domain Metrics during Running

A 0.053 mm2 10-bit 10-ks/s 40-nW SAR ADC with pseudo single ended switching procedure for bio-related applications

A 0.058mm224μW Temperature Sensor in 40nm CMOS Process with ±0.5∘C Inaccuracy from − 55 to 175∘C

A 0.05pJ/Pixel 70fps FHD 1Meps Event-Driven Visual Data Processing Unit

0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers

A 0.1–1 GHz low power RF receiver front-end with noise cancellation technique for WSN applications

A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applications

A 0.1–4.5 GHz MMIC Controlled Digital Step Attenuator Based on SiGe

A 0.1–4 GHz SDR receiver with reconfigurable 10–100 MHz signal bandwidth in 65 nm CMOS

A 0.1-40 GHz broadband MEMS clamped-clamped beam capacitive power sensor based on GaAs technology

A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

A 0.1–5.0 GHz SDR transmitter with current-mode power-mixer and self-calibration scheme in 65 nm CMOS

A 0.1 DEG/H Module-Level Silicon Mems Rate Integrating Gyroscope Using Virtually Rotated Donut-Mass Structure and Demonstration of the Earth's Rotation Detection

0.1-Micrometer scaling by 1:1 synchrotron radiation lithography

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