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Structure and photoluminescence properties of carbon nanotip-vertical graphene nanohybrids

Journal of applied physics, 2016-01, Vol.119 (2)

2016

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AlN/AlGaInN superlattice light-emitting diodes at 280 nm

Journal of applied physics, 2003-02, Vol.93 (3), p.1363-1366

2003

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The effective point charge of probe tip in piezoresponse force microscopy

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Journal of applied physics, 2005-12, Vol.98 (12)

2005

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Structure properties of BiFeO3 films studied by micro-Raman scattering

Journal of applied physics, 2008-05, Vol.103 (9)

2008

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Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

Journal of applied physics, 2005-05, Vol.97 (9)

2005

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Evolution of surface roughness of AlN and GaN induced by inductively coupled Cl2/Ar plasma etching

Journal of applied physics, 2004-05, Vol.95 (9), p.4635-4641

2004

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Micro-Raman study of the microheterogeneity in the M A - M C phase transition in 0.67PbMg 1/3 Nb 2/3 O 3 -0.33PbTiO 3 single crystal

Journal of applied physics, 2011-04, Vol.109 (8), p.083517-083517-4

2011

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Micro-Raman study of the microheterogeneity in the M A- M C phase transition in 0.67PbMg1/3Nb2/3O3-0.33PbTiO3 single crystal

Journal of applied physics, 2011-04, Vol.109 (8)

2011

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Phase transition of Zn2SnO4 nanowires under high pressure

Journal of applied physics, 2009-12, Vol.106 (11)

2009

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Kerr rotation enhancement and correlation between perpendicular anisotropy and Kerr effect in PtCu(Al,Ag)/Co multilayers

Journal of applied physics, 1996-10, Vol.80 (7), p.3957-3961

1996

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Amorphization of C60 nanotubes under pressure

Journal of applied physics, 2011-07, Vol.110 (1)

2011

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Amorphization of C 60 nanotubes under pressure

Journal of applied physics, 2011-07, Vol.110 (1), p.014301-014301-4

2011

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Structure properties of BiFeO 3 films studied by micro-Raman scattering

Journal of applied physics, 2008-05, Vol.103 (9), p.093532-093532-5

2008

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Phase transition of Zn 2 SnO 4 nanowires under high pressure

Journal of applied physics, 2009-12, Vol.106 (11), p.113523-113523-5

2009

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Investigation of thermomagnetic recording on MnBiAl films and observation of their recorded domains

Journal of applied physics, 1995-05, Vol.77 (10), p.5452-5454

1995

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Erratum: “Efficacy of single and double Si N x interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy” [ J. Appl. Phys. 98, 123502 (2005)]

Journal of applied physics, 2006-03, Vol.99 (6), p.069902-069902-1

2006

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Erratum: “Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy” [J. Appl. Phys. 98, 123502 (2005)]

Journal of applied physics, 2006-03, Vol.99 (6)

2006

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Efficacy of single and double SiN x interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Journal of applied physics, 2005-12, Vol.98 (12), p.123502-123502-8

2005

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Enhanced photoluminescence from porous siliconby hydrogen-plasma etching

Journal of applied physics, 2005-04, Vol.97 (9), p.093501-093501-4

2005

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Infrared absorption spectra of manganese oxides La1−x−yRyCaxMnO3−δ

Journal of applied physics, 1997-05, Vol.81 (10), p.6943-6947

1997

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Plasmas generated by electron beam passing through diamond window

Journal of applied physics, 2020-10, Vol.128 (13)

2020

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Atomic-scale investigation on the origin of in-plane variants in L10-FePt nanoparticles embedded in a single-crystalline MgO matrix

Journal of applied physics, 2022-11, Vol.132 (17)

2022

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High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

Journal of applied physics, 2017-09, Vol.122 (12)

2017

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Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching

Journal of applied physics, 2010, Vol.107 (2), p.023522-023522-7

2010

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Structure and photoluminescence properties of carbon nanotip-vertical graphene nanohybrids

AlN/AlGaInN superlattice light-emitting diodes at 280 nm

The effective point charge of probe tip in piezoresponse force microscopy

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Structure properties of BiFeO3 films studied by micro-Raman scattering

Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

Evolution of surface roughness of AlN and GaN induced by inductively coupled Cl2/Ar plasma etching

Micro-Raman study of the microheterogeneity in the M A - M C phase transition in 0.67PbMg 1/3 Nb 2/3 O 3 -0.33PbTiO 3 single crystal

Micro-Raman study of the microheterogeneity in the M A- M C phase transition in 0.67PbMg1/3Nb2/3O3-0.33PbTiO3 single crystal

Phase transition of Zn2SnO4 nanowires under high pressure

Kerr rotation enhancement and correlation between perpendicular anisotropy and Kerr effect in PtCu(Al,Ag)/Co multilayers

Amorphization of C60 nanotubes under pressure

Amorphization of C 60 nanotubes under pressure

Structure properties of BiFeO 3 films studied by micro-Raman scattering

Phase transition of Zn 2 SnO 4 nanowires under high pressure

Investigation of thermomagnetic recording on MnBiAl films and observation of their recorded domains

Erratum: “Efficacy of single and double Si N x interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy” [ J. Appl. Phys. 98, 123502 (2005)]

Erratum: “Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy” [J. Appl. Phys. 98, 123502 (2005)]

Efficacy of single and double SiN x interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Enhanced photoluminescence from porous siliconby hydrogen-plasma etching

Infrared absorption spectra of manganese oxides La1−x−yRyCaxMnO3−δ

Plasmas generated by electron beam passing through diamond window

Atomic-scale investigation on the origin of in-plane variants in L10-FePt nanoparticles embedded in a single-crystalline MgO matrix

High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching

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