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Influence of screening dynamics on excitons in Ga2O3 polymorphs

Applied physics letters, 2019-03, Vol.114 (12)

2019

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Infrared absorbance of silicene and germanene

Applied physics letters, 2012-06, Vol.100 (26)

2012

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Direct-bandgap emission from hexagonal Ge and SiGe alloys

Nature (London), 2020-04, Vol.580 (7802), p.205-209

2020

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Influence of anisotropy, tilt and pairing of Weyl nodes: the Weyl semimetals TaAs, TaP, NbAs and NbP

The European physical journal. B, Condensed matter physics, 2020-08, Vol.93 (8), Article 157

2020

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Origin of Dirac-cone-like features in silicon structures on Ag(111) and Ag(110)

Journal of applied physics, 2013-09, Vol.114 (11)

2013

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Ab initio optical and energy loss spectra of transition metal monopnictides TaAs, TaP, NbAs, and NbP

Journal of applied physics, 2018-11, Vol.124 (20)

2018

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Charge Transport in Guanine-Based Materials

The journal of physical chemistry. B, 2009-05, Vol.113 (20), p.7367-7371

2009

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Beyond graphene: Clean, hydrogenated and halogenated silicene, germanene, stanene, and plumbene

Progress in surface science, 2021-08, Vol.96 (3), p.100615, Article 100615

2021

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Valence-band splittings in cubic and hexagonal AlN, GaN, and InN

Applied physics letters, 2010-12, Vol.97 (23), p.232101-232101-3

2010

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Properties of the In2O3-Si interface: An ab initio study of a model geometry

AIP Conference Proceedings, 2014, Vol.1598 (1), p.30

2014

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Tunable electronic properties of two-dimensional nitrides for light harvesting heterostructures

Applied physics letters, 2017-01, Vol.110 (1)

2017

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Starke Lichtemission in hexagonalen Ge‐ und SiGe‐Halbleitern: Halbleiterphysik

Physik in unserer Zeit, 2020-09, Vol.51 (5), p.216-217

2020

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Starke Lichtemission in hexagonalen Ge‐ und SiGe‐Halbleitern

Physik in unserer Zeit, 2020-09, Vol.51 (5), p.216-217

2020

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Direct experimental determination of the spontaneous polarization of GaN

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (8), Article 081302

2012

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Erratum: Band lineup at hexagonal Si x Ge 1 − x / Si y Ge 1 − y alloy interfaces [Phys. Rev. B 106 , 085303 (2022)]

Physical review. B, 2023-01, Vol.107 (3), Article 039903

2023

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Band lineup at hexagonal Si x Ge 1 − x / Si y Ge 1 − y alloy interfaces

Physical review. B, 2022-08, Vol.106 (8), Article 085303

2022

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Side-dependent electron escape from graphene- and graphane-like SiC layers

Applied physics letters, 2012-01, Vol.100 (4), p.043110-043110-4

2012

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Tuning Electronic Properties and Band Alignments of Phosphorene Combined With MoSe 2 and WSe 2

Journal of physical chemistry. C, 2017-02, Vol.121 (7), p.3862-3869

2017

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Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si x Ge 1 − x alloys

Physical review materials, 2023-01, Vol.7 (1), Article 014602

2023

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Metallic Properties of the Si(111) − 5 × 2 − Au Surface from Infrared Plasmon Polaritons and Ab Initio Theory

Nano letters, 2015-06, Vol.15 (6), p.4155-4160

2015

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Properties of the In{sub 2}O{sub 3}-Si interface: An ab initio study of a model geometry

AIP conference proceedings, 2014-05, Vol.1598 (1)

2014

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Coincidence Lattices and Interlayer Twist in van der Waals Heterostructures: Application of the Coincidence Lattice Method on $$\hbox {hBN/MoSe}_2$$ hBN/MoSe 2 Heterobilayer Systems

Journal of electronic materials, 2017-07, Vol.46 (7), p.3910-3916

2017

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Ab initio description and visualization of charge transport in durene crystals

Applied physics letters, 2008-12, Vol.93 (22)

2008

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Metal-to-Insulator Transition in Au Chains on Si(111)-5×2-Au by Band Filling: Infrared Plasmonic Signal and Ab Initio Band Structure Calculation

The journal of physical chemistry letters, 2015-09, Vol.6 (18), p.3615-3620

2015

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Coincidence Lattices and Interlayer Twist in van der Waals Heterostructures: Application of the Coincidence Lattice Method on hBN/MoSe2 Heterobilayer Systems

Journal of electronic materials, 2017-07, Vol.46 (7), p.3910-3916

2017

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Influence of screening dynamics on excitons in Ga2O3 polymorphs

Infrared absorbance of silicene and germanene

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Influence of anisotropy, tilt and pairing of Weyl nodes: the Weyl semimetals TaAs, TaP, NbAs and NbP

Origin of Dirac-cone-like features in silicon structures on Ag(111) and Ag(110)

Ab initio optical and energy loss spectra of transition metal monopnictides TaAs, TaP, NbAs, and NbP

Charge Transport in Guanine-Based Materials

Beyond graphene: Clean, hydrogenated and halogenated silicene, germanene, stanene, and plumbene

Valence-band splittings in cubic and hexagonal AlN, GaN, and InN

Properties of the In2O3-Si interface: An ab initio study of a model geometry

Tunable electronic properties of two-dimensional nitrides for light harvesting heterostructures

Starke Lichtemission in hexagonalen Ge‐ und SiGe‐Halbleitern: Halbleiterphysik

Starke Lichtemission in hexagonalen Ge‐ und SiGe‐Halbleitern

Direct experimental determination of the spontaneous polarization of GaN

Erratum: Band lineup at hexagonal Si x Ge 1 − x / Si y Ge 1 − y alloy interfaces [Phys. Rev. B 106 , 085303 (2022)]

Band lineup at hexagonal Si x Ge 1 − x / Si y Ge 1 − y alloy interfaces

Side-dependent electron escape from graphene- and graphane-like SiC layers

Tuning Electronic Properties and Band Alignments of Phosphorene Combined With MoSe 2 and WSe 2

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si x Ge 1 − x alloys

Metallic Properties of the Si(111) − 5 × 2 − Au Surface from Infrared Plasmon Polaritons and Ab Initio Theory

Properties of the In{sub 2}O{sub 3}-Si interface: An ab initio study of a model geometry

Coincidence Lattices and Interlayer Twist in van der Waals Heterostructures: Application of the Coincidence Lattice Method on $$\hbox {hBN/MoSe}_2$$ hBN/MoSe 2 Heterobilayer Systems

Ab initio description and visualization of charge transport in durene crystals

Metal-to-Insulator Transition in Au Chains on Si(111)-5×2-Au by Band Filling: Infrared Plasmonic Signal and Ab Initio Band Structure Calculation

Coincidence Lattices and Interlayer Twist in van der Waals Heterostructures: Application of the Coincidence Lattice Method on hBN/MoSe2 Heterobilayer Systems

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