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Direct-bandgap emission from hexagonal Ge and SiGe alloys

Nature (London), 2020-04, Vol.580 (7802), p.205-209

2020

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Influence of anisotropy, tilt and pairing of Weyl nodes: the Weyl semimetals TaAs, TaP, NbAs and NbP

The European physical journal. B, Condensed matter physics, 2020-08, Vol.93 (8), Article 157

2020

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Starke Lichtemission in hexagonalen Ge‐ und SiGe‐Halbleitern: Halbleiterphysik

Physik in unserer Zeit, 2020-09, Vol.51 (5), p.216-217

2020

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Starke Lichtemission in hexagonalen Ge‐ und SiGe‐Halbleitern

Physik in unserer Zeit, 2020-09, Vol.51 (5), p.216-217

2020

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Direct experimental determination of the spontaneous polarization of GaN

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (8), Article 081302

2012

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Erratum: Band lineup at hexagonal Si x Ge 1 − x / Si y Ge 1 − y alloy interfaces [Phys. Rev. B 106 , 085303 (2022)]

Physical review. B, 2023-01, Vol.107 (3), Article 039903

2023

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Band lineup at hexagonal Si x Ge 1 − x / Si y Ge 1 − y alloy interfaces

Physical review. B, 2022-08, Vol.106 (8), Article 085303

2022

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Tuning Electronic Properties and Band Alignments of Phosphorene Combined With MoSe 2 and WSe 2

Journal of physical chemistry. C, 2017-02, Vol.121 (7), p.3862-3869

2017

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Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si x Ge 1 − x alloys

Physical review materials, 2023-01, Vol.7 (1), Article 014602

2023

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Metallic Properties of the Si(111) − 5 × 2 − Au Surface from Infrared Plasmon Polaritons and Ab Initio Theory

Nano letters, 2015-06, Vol.15 (6), p.4155-4160

2015

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Properties of the In{sub 2}O{sub 3}-Si interface: An ab initio study of a model geometry

AIP conference proceedings, 2014-05, Vol.1598 (1)

2014

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Coincidence Lattices and Interlayer Twist in van der Waals Heterostructures: Application of the Coincidence Lattice Method on $$\hbox {hBN/MoSe}_2$$ hBN/MoSe 2 Heterobilayer Systems

Journal of electronic materials, 2017-07, Vol.46 (7), p.3910-3916

2017

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Metal-to-Insulator Transition in Au Chains on Si(111)-5×2-Au by Band Filling: Infrared Plasmonic Signal and Ab Initio Band Structure Calculation

The journal of physical chemistry letters, 2015-09, Vol.6 (18), p.3615-3620

2015

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Coincidence Lattices and Interlayer Twist in van der Waals Heterostructures: Application of the Coincidence Lattice Method on hBN/MoSe2 Heterobilayer Systems

Journal of electronic materials, 2017-07, Vol.46 (7), p.3910-3916

2017

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Corrigendum: Optical absorption and emission of α-Sn nanocrystals from first principles

Nanotechnology, 2013-11, Vol.24 (46), p.469501

2013

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In4 d and Ga3 d levels in In x X 1− x N (X = Ga, Al) alloys

Applied physics letters, 2013-04, Vol.102 (17), p.172105

2013

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Cover Picture: Silicene on hydrogen-passivated Si(111) and Ge(111) substrates (Phys. Status Solidi RRL 8/2013)

Physica status solidi. PSS-RRL. Rapid research letters, 2013-08, Vol.7 (8), p.n/a

2013

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Trends on band alignments: Validity of Anderson's rule in SnS 2 - and SnSe 2 -based van der Waals heterostructures

Physical review. B, 2018-04, Vol.97 (16), Article 165402

2018

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Front Cover: Charge transport in organic crystals: Theory and modelling (Phys. Status Solidi B 3/2011)

physica status solidi (b), 2011-03, Vol.248 (3), p.n/a

2011

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Enhanced Optical Absorption Due to Symmetry Breaking in TiO 2(1– x ) S 2 x Alloys

Journal of physical chemistry. C, 2013-02, Vol.117 (8), p.4189-4193

2013

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Enhanced Optical Absorption Due to Symmetry Breaking in TiO 2(1–x) S 2x Alloys

Journal of physical chemistry. C, 2013-02, Vol.117 (8)

2013

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Ab initio calculation of the atomic and electronic structure for the clean 3C SiC(110) 1 × 1 surface

Surface science, 1994-04, Vol.307, p.989-994

1994

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Ab initio description and visualization of charge transportin durene crystals

Applied physics letters, 2008-12, Vol.93 (22), p.222105-222105-3

2008

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Vacancy-induced 2 × 2 reconstruction of the Si-terminated 3C SiC(111) surface: ab initio calculations of the atomic and electronic structure

Surface science, 1995-07, Vol.331-333, p.1105-1109

1995

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Efficiency limits of Si / SiO 2 quantum well solar cells from first-principles calculations

Journal of applied physics, 2009-05, Vol.105 (10), p.104511-104511-12

2009

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Direct-bandgap emission from hexagonal Ge and SiGe alloys

Influence of anisotropy, tilt and pairing of Weyl nodes: the Weyl semimetals TaAs, TaP, NbAs and NbP

Starke Lichtemission in hexagonalen Ge‐ und SiGe‐Halbleitern: Halbleiterphysik

Starke Lichtemission in hexagonalen Ge‐ und SiGe‐Halbleitern

Direct experimental determination of the spontaneous polarization of GaN

Erratum: Band lineup at hexagonal Si x Ge 1 − x / Si y Ge 1 − y alloy interfaces [Phys. Rev. B 106 , 085303 (2022)]

Band lineup at hexagonal Si x Ge 1 − x / Si y Ge 1 − y alloy interfaces

Tuning Electronic Properties and Band Alignments of Phosphorene Combined With MoSe 2 and WSe 2

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si x Ge 1 − x alloys

Metallic Properties of the Si(111) − 5 × 2 − Au Surface from Infrared Plasmon Polaritons and Ab Initio Theory

Properties of the In{sub 2}O{sub 3}-Si interface: An ab initio study of a model geometry

Coincidence Lattices and Interlayer Twist in van der Waals Heterostructures: Application of the Coincidence Lattice Method on $$\hbox {hBN/MoSe}_2$$ hBN/MoSe 2 Heterobilayer Systems

Metal-to-Insulator Transition in Au Chains on Si(111)-5×2-Au by Band Filling: Infrared Plasmonic Signal and Ab Initio Band Structure Calculation

Coincidence Lattices and Interlayer Twist in van der Waals Heterostructures: Application of the Coincidence Lattice Method on hBN/MoSe2 Heterobilayer Systems

Corrigendum: Optical absorption and emission of α-Sn nanocrystals from first principles

In4 d and Ga3 d levels in In x X 1− x N (X = Ga, Al) alloys

Cover Picture: Silicene on hydrogen-passivated Si(111) and Ge(111) substrates (Phys. Status Solidi RRL 8/2013)

Trends on band alignments: Validity of Anderson's rule in SnS 2 - and SnSe 2 -based van der Waals heterostructures

Front Cover: Charge transport in organic crystals: Theory and modelling (Phys. Status Solidi B 3/2011)

Enhanced Optical Absorption Due to Symmetry Breaking in TiO 2(1– x ) S 2 x Alloys

Enhanced Optical Absorption Due to Symmetry Breaking in TiO 2(1–x) S 2x Alloys

Ab initio calculation of the atomic and electronic structure for the clean 3C SiC(110) 1 × 1 surface

Ab initio description and visualization of charge transportin durene crystals

Vacancy-induced 2 × 2 reconstruction of the Si-terminated 3C SiC(111) surface: ab initio calculations of the atomic and electronic structure

Efficiency limits of Si / SiO 2 quantum well solar cells from first-principles calculations

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