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A 72% error reduction scheme based on temperature acceleration for long-term data storage applications: Cold flash and millennium memories

Solid-state electronics, 2016-07, Vol.121, p.25-33

2016

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Simulation of organic inverter

Solid-state electronics, 2012-02, Vol.68, p.18-21

2012

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Controllable design of solid-state perovskite solar cells by SCAPS device simulation

Solid-state electronics, 2016-12, Vol.126, p.75-80

2016

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Fabrication of garnet solid electrolytes via sputtering for solid-state batteries

Solid-state electronics, 2024-05, Vol.215, p.108894, Article 108894

2024

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Junctionless Nanowire Transistor (JNT): Properties and design guidelines

Solid-state electronics, 2011-11, Vol.65-66, p.33-37

2011

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High-periphery GaN HEMT modeling up to 65 GHz and 200 °C

Solid-state electronics, 2019-02, Vol.152, p.11-16

2019

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Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance

Solid-state electronics, 2023-06, Vol.204, p.108651, Article 108651

2023

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Micropower energy harvesting

Solid-state electronics, 2009-07, Vol.53 (7), p.684-693

2009

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Investigation of the different possible energy band structure configurations for planar heterojunction organic solar cells

Solid-state electronics, 2022-05, Vol.191, p.108254, Article 108254

2022

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An analysis on the ambipolar current in Si double-gate tunnel FETs

Solid-state electronics, 2012-04, Vol.70, p.67-72

2012

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Grain boundary-driven leakage path formation in HfO2 dielectrics

Solid-state electronics, 2011-11, Vol.65-66, p.146-150

2011

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Electrical characteristics of 20-nm junctionless Si nanowire transistors

Solid-state electronics, 2012-07, Vol.73, p.7-10

2012

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Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Solid-state electronics, 2009-11, Vol.53 (11), p.1159-1164

2009

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Ammonia gas sensing behavior of graphene surface decorated with gold nanoparticles

Solid-state electronics, 2012-12, Vol.78, p.159-165

2012

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Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

Solid-state electronics, 2013-05, Vol.83, p.50-55

2013

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Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors

Solid-state electronics, 2010-04, Vol.54 (4), p.427-432

2010

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Revisited parameter extraction methodology for electrical characterization of junctionless transistors

Solid-state electronics, 2013-12, Vol.90, p.86-93

2013

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Engineering the current–voltage characteristics of metal–insulator–metal diodes using double-insulator tunnel barriers

Solid-state electronics, 2012, Vol.67 (1), p.94-99

2012

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Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

Solid-state electronics, 2010-12, Vol.54 (12), p.1497-1499

2010

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Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling

Solid-state electronics, 2011-11, Vol.65-66, p.226-233

2011

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Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

Solid-state electronics, 2010-06, Vol.54 (6), p.660-664

2010

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SOI dual-gate ISFET with variable oxide capacitance and channel thickness

Solid-state electronics, 2014-07, Vol.97, p.2-7

2014

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Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors

Solid-state electronics, 2011-08, Vol.62 (1), p.44-47

2011

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Fabrication of transparent p-NiO/ n-ZnO heterojunction devices for ultraviolet photodetectors

Solid-state electronics, 2011-09, Vol.63 (1), p.37-41

2011

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Temperature impact on the tunnel fet off-state current components

Solid-state electronics, 2012-12, Vol.78, p.141-146

2012

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Zeitschrift / SerieSolid-State Electronics

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A 72% error reduction scheme based on temperature acceleration for long-term data storage applications: Cold flash and millennium memories

Simulation of organic inverter

Controllable design of solid-state perovskite solar cells by SCAPS device simulation

Fabrication of garnet solid electrolytes via sputtering for solid-state batteries

Junctionless Nanowire Transistor (JNT): Properties and design guidelines

High-periphery GaN HEMT modeling up to 65 GHz and 200 °C

Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance

Micropower energy harvesting

Investigation of the different possible energy band structure configurations for planar heterojunction organic solar cells

An analysis on the ambipolar current in Si double-gate tunnel FETs

Grain boundary-driven leakage path formation in HfO2 dielectrics

Electrical characteristics of 20-nm junctionless Si nanowire transistors

Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Ammonia gas sensing behavior of graphene surface decorated with gold nanoparticles

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors

Revisited parameter extraction methodology for electrical characterization of junctionless transistors

Engineering the current–voltage characteristics of metal–insulator–metal diodes using double-insulator tunnel barriers

Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling

Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

SOI dual-gate ISFET with variable oxide capacitance and channel thickness

Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors

Fabrication of transparent p-NiO/ n-ZnO heterojunction devices for ultraviolet photodetectors

Temperature impact on the tunnel fet off-state current components

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