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A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOS

Electronics (Basel), 2022-06, Vol.11 (11)

2022

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A 0.00426 mm[sup.2] 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

Electronics (Basel), 2022-11, Vol.11 (21)

2022

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A 0.0106 mm2 8nW Resistor-Less BJT Bandgap Reference in 65nm

ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC), 2023, p.85-88

2023

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IEEE_Xplore

0.015 Degree-Per-Hour Honeycomb Disk Resonator Gyroscope

IEEE sensors journal, 2021-03, Vol.21 (6), p.7326-7338

2021

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IEEE_Xplore

0.02-wavelengths-thick transmission-type designer wave plate with high efficiency

Journal of physics. D, Applied physics, 2019-09, Vol.52 (37), p.375105

2019

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A 0.021mm2 92dB-SNDR 88kHz-BW Incremental Zoom ADC with 2nd-order RT-DEM and Quiet Chopping

ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC), 2023, p.293-296

2023

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IEEE_Xplore

0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation Monitoring

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(6), 78, pp.920-926

2017

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0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laser

IEEE photonics technology letters, 1989-12, Vol.1 (12), p.452-454

1989

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IEEE_Xplore

0.05 mu m (3 sigma ) overlay accuracy through-the-lens alignment in an excimer laser lithography system

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992, Vol.31 (12B), p.4161-4166

1992

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A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing film

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-05, Vol.7 (21), p.644-6447

2019

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0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects

Japanese Journal of Applied Physics, 1994-01, Vol.33 (1B), p.798-803

1994

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A 0.1-1.2 GHz CMOS ultra-broadband power amplifier

2014 IEEE MTT-S International Microwave Symposium (IMS2014), 2014, p.1-3

2014

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IEEE_Xplore

0.1-1-THz High-Repetition-Rate Femtosecond Pulse Generation From Quasi-CW Dual-Pumped All-Fiber Phase-Locked Kerr Combs

IEEE photonics journal, 2016-04, Vol.8 (2), p.1-7

2016

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A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applications

Microsystem technologies : sensors, actuators, systems integration, 2020-07, Vol.26 (7), p.2279-2293

2020

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A 0.1-40 GHz broadband MEMS clamped-clamped beam capacitive power sensor based on GaAs technology

Journal of micromechanics and microengineering, 2014-06, Vol.24 (6), p.65024-7

2014

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A 0.1-6 GHz digital controlled variable gain low noise MMIC amplifier

2017 Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL), 2017, p.477-481

2017

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IEEE_Xplore

0.1 dB/cm waveguide losses in single-mode SOI rib waveguides

IEEE photonics technology letters, 1996-05, Vol.8 (5), p.647-648

1996

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IEEE_Xplore

0.1 eV HgCdTe photoconductive detector performance

Infrared physics, 1977-01, Vol.17 (2), p.127-135

1977

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0.1 ev HgCdTe photodetectors

Infrared physics, 1975-01, Vol.15 (2), p.111-124

1975

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A 0.1 G-to-20 G integrated MEMS inertial sensor

Japanese Journal of Applied Physics, 2015-08, Vol.54 (8), p.87202

2015

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An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

IEEE transactions on electron devices, 1999, Vol.46 (4), p.820-822

1999

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0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer

IEEE transactions on electron devices, 1993-05, Vol.40 (5), p.1019-1022

1993

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IEEE_Xplore

An 0.1-μm voidless double-deck-shaped (DDS) gate HJFET with reduced gate-fringing-capacitance

IEEE transactions on electron devices, 1999, Vol.46 (5), p.859-864

1999

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0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver

IEEE photonics technology letters, 1998-10, Vol.10 (10), p.1501-1503

1998

Link zum Volltext
IEEE_Xplore

The 0:1 resonance bifurcation associated with the supercritical Hamiltonian pitchfork bifurcation

Dynamical systems (London, England), 2023-07, Vol.38 (3), p.427-452

Zhou, Xing

2023

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A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOS

A 0.00426 mm[sup.2] 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

A 0.0106 mm2 8nW Resistor-Less BJT Bandgap Reference in 65nm

0.015 Degree-Per-Hour Honeycomb Disk Resonator Gyroscope

0.02-wavelengths-thick transmission-type designer wave plate with high efficiency

A 0.021mm2 92dB-SNDR 88kHz-BW Incremental Zoom ADC with 2nd-order RT-DEM and Quiet Chopping

0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation Monitoring

0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laser

0.05 mu m (3 sigma ) overlay accuracy through-the-lens alignment in an excimer laser lithography system

A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing film

0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects

A 0.1-1.2 GHz CMOS ultra-broadband power amplifier

0.1-1-THz High-Repetition-Rate Femtosecond Pulse Generation From Quasi-CW Dual-Pumped All-Fiber Phase-Locked Kerr Combs

A 0.1–2.75 GHz high-linear low-noise transconductance amplifier for high-performance multi-standard wireless applications

A 0.1-40 GHz broadband MEMS clamped-clamped beam capacitive power sensor based on GaAs technology

A 0.1-6 GHz digital controlled variable gain low noise MMIC amplifier

0.1 dB/cm waveguide losses in single-mode SOI rib waveguides

0.1 eV HgCdTe photoconductive detector performance

0.1 ev HgCdTe photodetectors

A 0.1 G-to-20 G integrated MEMS inertial sensor

An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer

An 0.1-μm voidless double-deck-shaped (DDS) gate HJFET with reduced gate-fringing-capacitance

0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver

The 0:1 resonance bifurcation associated with the supercritical Hamiltonian pitchfork bifurcation

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