Details

Autor(en) / Beteiligte

• Aftab, Sikandar
• Muhammad Waqas Iqbal
• Amir Muhammad Afzal
• M Farooq Khan
• Hussain, Ghulam
• Waheed, Hafiza Sumaira
• Muhammad Arshad Kamran

Titel

Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts

Ist Teil von

• RSC advances, 2019-01, Vol.9 (18), p.10017-10023

Ort / Verlag

Cambridge: Royal Society of Chemistry

Erscheinungsjahr

2019

Link zum Volltext

Quelle

EZB-FREE-00999 freely available EZB journals

Beschreibungen/Notizen

• Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance. In this research, a p-type molybdenum ditelluride (p-MoTe2) based Schottky barrier diode was fabricated using asymmetric metal contacts. The MoTe2 nano-flakes were mechanically exfoliated using adhesive tape and with the help of dry transfer techniques, the flakes were transferred onto silicon/silicon dioxide (Si/SiO2) substrates to form the device. The Schottky-barrier was formed as a result of using ultra-low palladium/gold (Pd/Au) and high resistive chromium/gold (Cr/Au) metal electrodes. The Schottky diode exhibited a clear rectifying behavior with an on/off ratio of ∼103 and an ideality factor of ∼1.4 at zero gate voltage. In order to check the photovoltaic response, a green laser light was illuminated, which resulted in a responsivity of ∼3.8 × 103 A W−1. These values are higher than the previously reported results that were obtained using conventional semiconducting materials. Furthermore, the barrier heights for Pd and Cr with a MoTe2 junction were calculated to be 90 meV and 300 meV, respectively. In addition, the device was used for rectification purposes revealing a stable rectifying behavior.