Details

Autor(en) / Beteiligte

• Serna, Samuel
• Vakarin, Vladyslav
• Ramirez, Joan-Manel
• Frigerio, Jacopo
• Ballabio, Andrea
• Le Roux, Xavier
• Vivien, Laurent
• Isella, Giovanni
• Cassan, Eric
• Dubreuil, Nicolas
• Marris-Morini, Delphine

Titel

Nonlinear Properties of Ge-rich Si1−xGex Materials with Different Ge Concentrations

Ist Teil von

• Scientific reports, 2017-11, Vol.7 (1), p.1-11, Article 14692

Ort / Verlag

London: Nature Publishing Group

Erscheinungsjahr

2017

Link zum Volltext

Quelle

EZB Free E-Journals

Beschreibungen/Notizen

• Abstract Silicon photonics is a large volume and large scale integration platform for applications from long-haul optical telecommunications to intra-chip interconnects. Extension to the mid-IR wavelength range is now largely investigated, mainly driven by absorption spectroscopy applications. Germanium (Ge) is particularly compelling as it has a broad transparency window up to 15 µm and a much higher third-order nonlinear coefficient than silicon which is very promising for the demonstration of efficient non-linear optics based active devices. Si 1−x Ge x alloys have been recently studied due to their ability to fine-tune the bandgap and refractive index. The material nonlinearities are very sensitive to any modification of the energy bands, so Si 1−x Ge x alloys are particularly interesting for nonlinear device engineering. We report on the first third order nonlinear experimental characterization of Ge-rich Si 1−x Ge x waveguides, with Ge concentrations x ranging from 0.7 to 0.9. The characterization performed at 1580 nm is compared with theoretical models and a discussion about the prediction of the nonlinear properties in the mid-IR is introduced. These results will provide helpful insights to assist the design of nonlinear integrated optical based devices in both the near- and mid-IR wavelength ranges.