Details

Autor(en) / Beteiligte

• Ismail, Muhammad
• Huang, Chun-Yang
• Panda, Debashis
• Hung, Chung-Jung
• Tsai, Tsung-Ling
• Jieng, Jheng-Hong
• Lin, Chun-An
• Chand, Umesh
• Rana, Anwar Manzoor
• Ahmed, Ejaz
• Talib, Ijaz
• Nadeem, Muhammad Younus
• Tseng, Tseung-Yuen

Titel

Forming-free bipolar resistive switching in nonstoichiometric ceria films

Ist Teil von

• Nanoscale research letters, 2014-01, Vol.9 (1), p.45-45, Article 45

Ort / Verlag

New York: Springer New York

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The mechanism of forming-free bipolar resistive switching in a Zr/CeO x /Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrO y layer at the Zr/CeO x interface. X-ray diffraction studies of CeO x films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeO x film and in the nonstoichiometric ZrO y interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).