Details

Autor(en) / Beteiligte

• Tang, M.H.
• Zeng, Z.Q.
• Li, J.C.
• Wang, Z.P.
• Xu, X.L.
• Wang, G.Y.
• Zhang, L.B.
• Yang, S.B.
• Xiao, Y.G.
• Jiang, B.

Titel

Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications

Ist Teil von

• Solid-state electronics, 2011-09, Vol.63 (1), p.100-104

Ort / Verlag

Kidlington: Elsevier Ltd

Erscheinungsjahr

2011

Link zum Volltext

Quelle

Elsevier ScienceDirect Journals Complete

Beschreibungen/Notizen

• ► La-doped ZnO films exhibit reversible, controllable and remarkable reliability unipolar resistive switching behaviors. ► Impurities La 3+ doped will increase the interface trap density, which will help to increase the ON/OFF ratio. ► The filament theory is applied to explain the resistive switching (RS) phenomenon for the Pt/Ti/SiO 2/Si substrate. ► The interface effect is suggested to be responsible for the RS phenomenon for Pt/ZnLaO/ p-Si device. Rare earth element La-doped ZnO polycrystalline films are prepared on Pt/Ti/SiO 2/Si substrate and p-Si substrate by chemical solution deposition (CSD) method. High R OFF/ R ON ratios, low operation voltages within 150 switching cycles of test and long retention measurement are obtained, which indicate that the two different structure devices exhibit reversible, controllable and remarkable reliability unipolar resistive switching (RS) behaviors. The RS mechanism is related to the different substrate of the samples. The filament theory and the interface effect are suggested to be responsible for the RS phenomenon for the Pt/Ti/SiO 2/Si substrate and p-Si substrate, respectively.